Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High voltage GaN-based transistor structure

High voltage GaN-based transistor structure

US Patent 7459356 · Granted Dec 2, 2008

Estimated economic value: $2,158,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit2025
RF acoustic wave resonators integrated with high electron mobility transistors i2025
Method for fabricating an acoustic resonator device with perimeter structures2025
Method for fabricating an acoustic resonator device with perimeter structures2025
5.1-7.1GHz Wi-Fi6E coexistence acoustic wave resonator RF diplexer circuit2025
Method of manufacturing integrated circuit configured with two or more single cr2025
Acoustic wave resonator, RF filter circuit and system2025
Piezoelectric acoustic resonator manufactured with piezoelectric thin film trans2024
Front end modules for Wi-Fi acoustic wave resonator RF filter circuits2024
5 and 6 GHz Wi-Fi coexistence acoustic wave resonator RF diplexer circuit2024
Methods of forming group III piezoelectric thin films via removal of portions of2024
Method of manufacture for single crystal acoustic resonator devices using micro-2024