| 10446391 |
Thick pseudomorphic nitride epitaxial layers |
James R. Grandusky, Leo J. Schowalter, Shawn R. Gibb, Shiwen Liu |
2019-10-15 |
| 9970127 |
Method and apparatus for producing large, single-crystals of aluminum nitride |
Leo J. Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan |
2018-05-15 |
| 9447521 |
Method and apparatus for producing large, single-crystals of aluminum nitride |
Leo J. Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan |
2016-09-20 |
| 9437430 |
Thick pseudomorphic nitride epitaxial layers |
Leo J. Schowalter, James R. Grandusky, Shiwen Liu |
2016-09-06 |
| 8896020 |
Method and apparatus for producing large, single-crystals of aluminum nitride |
Leo J. Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan |
2014-11-25 |
| 8545629 |
Method and apparatus for producing large, single-crystals of aluminum nitride |
Leo J. Schowalter, Glen A. Slack, J. Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan |
2013-10-01 |
| 8222650 |
Nitride semiconductor heterostructures and related methods |
Leo J. Schowalter, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles +1 more |
2012-07-17 |
| 8080833 |
Thick pseudomorphic nitride epitaxial layers |
James R. Grandusky, Leo J. Schowalter, Shawn R. Gibb, Shiwen Liu |
2011-12-20 |
| 7968391 |
High voltage GaN-based transistor structure |
Brook Hosse, Shawn R. Gibb, David Grider, Jeffrey B. Shealy |
2011-06-28 |
| 7638346 |
Nitride semiconductor heterostructures and related methods |
Leo J. Schowalter, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles +1 more |
2009-12-29 |
| 7459356 |
High voltage GaN-based transistor structure |
Brook Hosse, Shawn R. Gibb, David Grider, Jeffrey B. Shealy |
2008-12-02 |
| 7408182 |
Surface passivation of GaN devices in epitaxial growth chamber |
David Grider, Shawn R. Gibb, Brook Hosse, Jeffrey B. Shealy |
2008-08-05 |
| 7250360 |
Single step, high temperature nucleation process for a lattice mismatched substrate |
James R. Shealy |
2007-07-31 |
| 7052942 |
Surface passivation of GaN devices in epitaxial growth chamber |
David Grider, Shawn R. Gibb, Brook Hosse, Jeffrey B. Shealy |
2006-05-30 |
| 7033961 |
Epitaxy/substrate release layer |
Brook Hosse, Shawn R. Gibb, David Grider, Jeffrey B. Shealy |
2006-04-25 |
| 7026665 |
High voltage GaN-based transistor structure |
Brook Hosse, Shawn R. Gibb, David Grider, Jeffrey B. Shealy |
2006-04-11 |
| 6478871 |
Single step process for epitaxial lateral overgrowth of nitride based materials |
James R. Shealy |
2002-11-12 |