Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9252247 | Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs | Miroslav Micovic, Andrea Corrion, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham +1 more | 2016-02-02 |
| 8766321 | Self-aligned sidewall gate GaN HEMT | Keisuke Shinohara, Andrea Corrion, Miroslav Micovic, Shawn D. Burnham, Hooman Kazemi +2 more | 2014-07-01 |
| 8748244 | Enhancement and depletion mode GaN HMETs on the same substrate | Andrea Corrion, Miroslav Micovic, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham +1 more | 2014-06-10 |
| 8686473 | Apparatus and method for reducing the interface resistance in GaN heterojunction FETs | Miroslav Micovic, Andrea Corrion, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham +1 more | 2014-04-01 |
| 8383471 | Self aligned sidewall gate GaN HEMT | Keisuke Shinihara, Andrea Corrion, Miroslav Micovic, Shawn D. Burnham, Hooman Kazemi +2 more | 2013-02-26 |
| 8030688 | Ohmic metal contact protection using an encapsulation layer | Tahir Hussain, Miroslav Micovic, Gary Peng, Ara K. Kurdoghlian | 2011-10-04 |
| 7700974 | Process for fabricating ultra-low contact resistances in GaN-based devices | Nguyen X. Nguyen, Chanh Nguyen | 2010-04-20 |
| 7598131 | High power-low noise microwave GaN heterojunction field effect transistor | Miroslav Micovic, Tahir Hussain, Mike Antcliffe | 2009-10-06 |
| 7566916 | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer | Tahir Hussain, Miroslav Micovic, Gary Peng, Ara K. Kurdoghlian | 2009-07-28 |
| 7470941 | High power-low noise microwave GaN heterojunction field effect transistor | Miroslav Micovic, Mike Antcliffe, Tahir Hussain | 2008-12-30 |
| 7247893 | Non-planar nitride-based heterostructure field effect transistor | Jeong-Sun Moon, Wah S. Wong, David Grider | 2007-07-24 |
| 7098490 | GaN DHFET | Miroslav Micovic, Tahir Hussain, Peter W. Deelman | 2006-08-29 |
| 6897137 | Process for fabricating ultra-low contact resistances in GaN-based devices | Nguyen X. Nguyen, Chanh Nguyen | 2005-05-24 |
| 6884704 | Ohmic metal contact and channel protection in GaN devices using an encapsulation layer | Tahir Hussain, Miroslav Micovic, Gary Peng, Ara K. Kurdoghlian | 2005-04-26 |
| 6852615 | Ohmic contacts for high electron mobility transistors and a method of making the same | Miroslav Micovic, Tahir Hussain, Janna Ruth Duvall | 2005-02-08 |
| 6830945 | Method for fabricating a non-planar nitride-based heterostructure field effect transistor | Jeong-Sun Moon, Wah S. Wong, David Grider | 2004-12-14 |