Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7989842 | Method and apparatus for heterojunction barrier diode detector for ultrahigh sensitivity | Hooman Kazemi, Berinder Brar | 2011-08-02 |
| 7700969 | Type II interband heterostructure backward diodes | Joel N. Schulman, David H. Chow | 2010-04-20 |
| 7675090 | Semiconductor device having a contact on a buffer layer thereof and method of forming the same | Mariam Sadaka, Berinder Brar, Wonill Ha | 2010-03-09 |
| 7655963 | Semiconductor device including a lateral field-effect transistor and Schottky diode | Mariam Sadaka, Berinder Brar, Wonill Ha | 2010-02-02 |
| 7564074 | Semiconductor device including a lateral field-effect transistor and Schottky diode | Mariam Sadaka, Berinder Brar, Wonill Ha | 2009-07-21 |
| 7504673 | Semiconductor device including a lateral field-effect transistor and Schottky diode | Mariam Sadaka, Berinder Brar, Wonill Ha | 2009-03-17 |
| 7170105 | Type II interband heterostructure backward diodes | Joel N. Schulman, David H. Chow | 2007-01-30 |
| 6897137 | Process for fabricating ultra-low contact resistances in GaN-based devices | Nguyen X. Nguyen, Paul Hashimoto | 2005-05-24 |
| 6855948 | Low base-emitter voltage heterojunction bipolar transistor | David H. Chow, Kenneth R. Elliott | 2005-02-15 |
| 6673265 | Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes | — | 2004-01-06 |
| 6635907 | Type II interband heterostructure backward diodes | Joel N. Schulman, David H. Chow | 2003-10-21 |
| 6100548 | Modulation-doped field-effect transistors and fabrication processes | Nguyen X. Nguyen, Minh Le | 2000-08-08 |
| 5856217 | Modulation-doped field-effect transistors and fabrication processes | Nguyen X. Nguyen, Minh Le | 1999-01-05 |
| 5766695 | Method for reducing surface layer defects in semiconductor materials having a volatile species | Robert G. Wilson | 1998-06-16 |
| 5753545 | Effective constant doping in a graded compositional alloy | Takyiu Liu | 1998-05-19 |
| 5612551 | AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications | Takyiu Liu, Mehran Matloubian | 1997-03-18 |
| 5606195 | High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes | William W. HOOPER, Michael Case | 1997-02-25 |