Issued Patents All Time
Showing 1–25 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12406901 | Wafer-scale direct bonded array core block for an active electronically steerable array (AESA) | Karen Kaneko Baker, Christopher Carbonneau, Katherine J. Herrick, Teresa J. Clement, Jeffrey R. LaRoche | 2025-09-02 |
| 11917746 | Low cost panel AESA with thermal management | Brandon W. Pillans, Andrew D. Gamalski, Andrew K. Brown | 2024-02-27 |
| 11522508 | Dual-band monolithic microwave IC (MMIC) power amplifier | Andrew D. Gamalski, Katherine J. Herrick | 2022-12-06 |
| 11411295 | Antenna sub-array blocks having heat dissipation | — | 2022-08-09 |
| 10483184 | Recursive metal embedded chip assembly | Florian G. Herrault | 2019-11-19 |
| 10418473 | Monolithic integration of group III nitride epitaxial layers | David F. Brown, Keisuke Shinohara, Andrea Corrion | 2019-09-17 |
| 10217648 | Fabrication of microfluidic channels in diamond | David F. Brown, Keisuke Shinohara, Alexandros Margomenos, Andrea Corrion, Hector L. Bracamontes +1 more | 2019-02-26 |
| 10170611 | T-gate field effect transistor with non-linear channel layer and/or gate foot face | Yan Tang, Keisuke Shinohara, Dean C. Regan, Helen Fung | 2019-01-01 |
| 10079160 | Surface mount package for semiconductor devices with embedded heat spreaders | Alexandros Margomenos, Eric M. Prophet | 2018-09-18 |
| 10026672 | Recursive metal embedded chip assembly | Florian G. Herrault | 2018-07-17 |
| 9954090 | Monolithic integration of group III nitride epitaxial layers | David F. Brown, Keisuke Shinohara, Andrea Corrion | 2018-04-24 |
| 9929243 | Stepped field plate wide bandgap field-effect transistor and method | Andrea Corrion, Keisuke Shinohara, Rongming Chu, David F. Brown, Alexandros Margomenos +1 more | 2018-03-27 |
| 9842814 | Integrated RF subsystem | Florian G. Herrault | 2017-12-12 |
| 9837372 | Wafer-level die to package and die to die interconnects suspended over integrated heat sinks | Florian G. Herrault, Melanie S. Yajima, Alexandros Margomenos | 2017-12-05 |
| 9780014 | Simultaneous controlled depth hot embossing and active side protection during packaging and assembly of wide bandgap devices | Alexandros Margomenos | 2017-10-03 |
| 9553057 | E-plane probe with stepped surface profile for high-frequency | Eric M. Prophet, Alexandros Margomenos | 2017-01-24 |
| 9525033 | Methods relating to a group III HFET with a graded barrier layer | David F. Brown | 2016-12-20 |
| 9496197 | Near junction cooling for GaN devices | Alexandros Margomenos, Keisuke Shinohara, Andrea Corrion | 2016-11-15 |
| 9449833 | Methods of fabricating self-aligned FETS using multiple sidewall spacers | Dean C. Regan, Keisuke Shinohara, Yan Tang | 2016-09-20 |
| 9419122 | Etch-based fabrication process for stepped field-plate wide-bandgap | Andrea Corrion, Keisuke Shinohara, Rongming Chu, David F. Brown, Adam J. Williams +2 more | 2016-08-16 |
| 9385083 | Wafer-level die to package and die to die interconnects suspended over integrated heat sinks | Florian G. Herrault, Melanie S. Yajima, Alexandros Margomenos | 2016-07-05 |
| 9379680 | Systems, methods, and apparatus for a power amplifier module | Alexandros Margomenos, Ara K. Kurdoghlian, Ross Bowen | 2016-06-28 |
| 9378949 | Monolithic integration of group III nitride epitaxial layers | David F. Brown, Keisuke Shinohara, Andrea Corrion | 2016-06-28 |
| 9337124 | Method of integration of wafer level heat spreaders and backside interconnects on microelectronics wafers | Florian G. Herrault, Alexandros Margomenos, Melanie S. Yajima, Eric M. Prophet | 2016-05-10 |
| 9331735 | GaN based active cancellation circuit for high power simultaneous transmit and receive systems | Alexandros Margomenos, Ara K. Kurdoghlian | 2016-05-03 |