AC

Andrea Corrion

HL Hrl Laboratories: 24 patents #69 of 709Top 10%
📍 Malibu, CA: #31 of 447 inventorsTop 7%
🗺 California: #23,010 of 386,348 inventorsTop 6%
Overall (All Time): #167,205 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Showing 1–24 of 24 patents

Patent #TitleCo-InventorsDate
12230702 Self-passivated nitrogen-polar III-nitride transistor Daniel DENNINGHOFF, Fevzi Arkun, Micha Fireman 2025-02-18
10714605 Highly scaled linear GaN HEMT Structures Jeong-Sun Moon, Joel C. Wong, Adam J. Williams 2020-07-14
10418473 Monolithic integration of group III nitride epitaxial layers David F. Brown, Keisuke Shinohara, Miroslav Micovic 2019-09-17
10325997 Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas Sameh G. Khalil, Karim S. Boutros 2019-06-18
10217648 Fabrication of microfluidic channels in diamond David F. Brown, Keisuke Shinohara, Miroslav Micovic, Alexandros Margomenos, Hector L. Bracamontes +1 more 2019-02-26
9954090 Monolithic integration of group III nitride epitaxial layers David F. Brown, Keisuke Shinohara, Miroslav Micovic 2018-04-24
9929243 Stepped field plate wide bandgap field-effect transistor and method Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F. Brown, Alexandros Margomenos +1 more 2018-03-27
9496197 Near junction cooling for GaN devices Miroslav Micovic, Alexandros Margomenos, Keisuke Shinohara 2016-11-15
9490357 Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas Sameh G. Khalil, Karim S. Boutros 2016-11-08
9419122 Etch-based fabrication process for stepped field-plate wide-bandgap Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F. Brown, Adam J. Williams +2 more 2016-08-16
9378949 Monolithic integration of group III nitride epitaxial layers David F. Brown, Keisuke Shinohara, Miroslav Micovic 2016-06-28
9252247 Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs Miroslav Micovic, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham, Hooman Kazemi +1 more 2016-02-02
9202880 Etch-based fabrication process for stepped field-plate wide-bandgap Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F. Brown, Adam J. Williams +2 more 2015-12-01
9142626 Stepped field plate wide bandgap field-effect transistor and method Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F. Brown, Alexandros Margomenos +1 more 2015-09-22
8980759 Method of fabricating slanted field-plate GaN heterojunction field-effect transistor Joel C. Wong, Keisuke Shinohara, Miroslav Micovic, Ivan Milosavljevic, Dean C. Regan +1 more 2015-03-17
8796736 Monolithic integration of group III nitride epitaxial layers David F. Brown, Keisuke Shinohara, Miroslav Micovic 2014-08-05
8766321 Self-aligned sidewall gate GaN HEMT Keisuke Shinohara, Miroslav Micovic, Paul Hashimoto, Shawn D. Burnham, Hooman Kazemi +2 more 2014-07-01
8748244 Enhancement and depletion mode GaN HMETs on the same substrate Miroslav Micovic, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham, Hooman Kazemi +1 more 2014-06-10
8698201 Gate metallization methods for self-aligned sidewall gate GaN HEMT Dean C. Regan, Keisuke Shinohara, Ivan Milosavljevic, Miroslav Micovic, Peter J. Willadsen +4 more 2014-04-15
8686473 Apparatus and method for reducing the interface resistance in GaN heterojunction FETs Miroslav Micovic, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham, Hooman Kazemi +1 more 2014-04-01
8653559 AlGaN/GaN hybrid MOS-HFET Karim S. Boutros, Mary Y. Chen, Samuel J. Kim, Rongming Chu, Shawn D. Burnham 2014-02-18
8558281 Gate metallization methods for self-aligned sidewall gate GaN HEMT Dean C. Regan, Keisuke Shinohara, Ivan Milosavljevic, Miroslav Micovic, Peter J. Willadsen +4 more 2013-10-15
8470652 Monolithic integration of group III nitride enhancement layers David F. Brown, Keisuke Shinohara, Miroslav Micovic 2013-06-25
8383471 Self aligned sidewall gate GaN HEMT Keisuke Shinihara, Miroslav Micovic, Paul Hashimoto, Shawn D. Burnham, Hooman Kazemi +2 more 2013-02-26