| 10700201 |
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
Karim S. Boutros, Keisuke Shinohara |
2020-06-30 |
| 10325997 |
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas |
Andrea Corrion, Karim S. Boutros |
2019-06-18 |
| 10192986 |
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
Karim S. Boutros, Keisuke Shinohara |
2019-01-29 |
| 9799726 |
Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas |
— |
2017-10-24 |
| 9601610 |
Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas |
— |
2017-03-21 |
| 9490357 |
Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas |
Andrea Corrion, Karim S. Boutros |
2016-11-08 |
| 9379195 |
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
Karim S. Boutros, Keisuke Shinohara |
2016-06-28 |
| 9077335 |
Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops |
Brian J. Hughes, Karim S. Boutros, Daniel M. Zehnder, Rongming Chu |
2015-07-07 |
| 9000484 |
Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask |
Karim S. Boutros |
2015-04-07 |
| 8999780 |
Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices |
Karim S. Boutros |
2015-04-07 |
| 8933487 |
Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask |
Karim S. Boutros |
2015-01-13 |
| 8680536 |
Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices |
Karim S. Boutros |
2014-03-25 |
| 8106451 |
Multiple lateral RESURF LDMOST |
— |
2012-01-31 |