Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10700201 | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same | Sameh G. Khalil, Keisuke Shinohara | 2020-06-30 |
| 10447261 | Dual gate III-switch for high voltage current relay | Brian J. Hughes | 2019-10-15 |
| 10325997 | Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas | Sameh G. Khalil, Andrea Corrion | 2019-06-18 |
| 10192986 | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same | Sameh G. Khalil, Keisuke Shinohara | 2019-01-29 |
| 9773884 | III-nitride transistor with engineered substrate | Rongming Chu, Zijan Ray Li | 2017-09-26 |
| 9490357 | Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gas | Sameh G. Khalil, Andrea Corrion | 2016-11-08 |
| 9379195 | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same | Sameh G. Khalil, Keisuke Shinohara | 2016-06-28 |
| 9368622 | Stitched gate GaN HEMTs | — | 2016-06-14 |
| 9337332 | III-Nitride insulating-gate transistors with passivation | Rongming Chu, Mary Y. Chen, Xu Chen, Zijian Li | 2016-05-10 |
| 9077335 | Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops | Brian J. Hughes, Daniel M. Zehnder, Sameh G. Khalil, Rongming Chu | 2015-07-07 |
| 9059200 | III-Nitride metal-insulator-semiconductor field-effect transistor | Rongming Chu, David F. Brown, Xu Chen, Adam J. Williams | 2015-06-16 |
| 8999780 | Non-uniform two-dimensional electron gas profile in III-nitride HEMT devices | Sameh G. Khalil | 2015-04-07 |
| 9000484 | Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask | Sameh G. Khalil | 2015-04-07 |
| 8933487 | Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask | Sameh G. Khalil | 2015-01-13 |
| 8853709 | III-nitride metal insulator semiconductor field effect transistor | Rongming Chu, David F. Brown, Xu Chen, Adam J. Williams | 2014-10-07 |
| 8772832 | GaN HEMTs with a back gate connected to the source | — | 2014-07-08 |
| 8680536 | Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices | Sameh G. Khalil | 2014-03-25 |
| 8653559 | AlGaN/GaN hybrid MOS-HFET | Andrea Corrion, Mary Y. Chen, Samuel J. Kim, Rongming Chu, Shawn D. Burnham | 2014-02-18 |
| 8530978 | High current high voltage GaN field effect transistors and method of fabricating same | Rongming Chu, Zijian Li, Shawn D. Burnham | 2013-09-10 |
| 8124505 | Two stage plasma etching method for enhancement mode GaN HFET | Shawn D. Burnham | 2012-02-28 |
| 7893791 | Gallium nitride switch methodology | Yin Tat Ma, Jonathan B. Hacker | 2011-02-22 |
| 7151307 | Integrated semiconductor circuits on photo-active Germanium substrates | Nasser H. Karam, Dimitri D. Krut, Moran Haddad | 2006-12-19 |
| 6635507 | Monolithic bypass-diode and solar-cell string assembly | Dmitri D. Krut, Nasser H. Karam | 2003-10-21 |
| 6350944 | Solar module array with reconfigurable tile | Raed A. Sherif | 2002-02-26 |