Issued Patents All Time
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9276529 | High performance GaN operational amplifier with wide bandwidth and high dynamic range | David F. Brown, Ara K. Kurdoghlian, Alexandros Margomenos | 2016-03-01 |
| 9252247 | Apparatus and method for reducing the interface resistance in GaN Heterojunction FETs | Andrea Corrion, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham, Hooman Kazemi +1 more | 2016-02-02 |
| 9214404 | Apparatus for mounting microelectronic chips | Alexandros Margomenos | 2015-12-15 |
| 9202880 | Etch-based fabrication process for stepped field-plate wide-bandgap | Andrea Corrion, Keisuke Shinohara, Rongming Chu, David F. Brown, Adam J. Williams +2 more | 2015-12-01 |
| 9190534 | Enhancement mode normally-off gallium nitride heterostructure field effect transistor | Tahir Hussain, Wah S. Wong, Shawn D. Burnham | 2015-11-17 |
| 9148092 | Monolithic integration of field-plate and T-gate devices | David F. Brown | 2015-09-29 |
| 9142626 | Stepped field plate wide bandgap field-effect transistor and method | Andrea Corrion, Keisuke Shinohara, Rongming Chu, David F. Brown, Alexandros Margomenos +1 more | 2015-09-22 |
| 9093394 | Method and structure for encapsulation and interconnection of transistors | Alexandros Margomenos, Keisuke Shinohara, Dean C. Regan, Colleen M. Butler | 2015-07-28 |
| 9059140 | Simultaneous controlled depth hot embossing and active side protection during packaging and assembly of wide bandgap devices | Alexandros Margomenos | 2015-06-16 |
| 8980759 | Method of fabricating slanted field-plate GaN heterojunction field-effect transistor | Andrea Corrion, Joel C. Wong, Keisuke Shinohara, Ivan Milosavljevic, Dean C. Regan +1 more | 2015-03-17 |
| 8860091 | Group III-N HFET with a graded barrier layer | David F. Brown | 2014-10-14 |
| 8796736 | Monolithic integration of group III nitride epitaxial layers | David F. Brown, Keisuke Shinohara, Andrea Corrion | 2014-08-05 |
| 8766321 | Self-aligned sidewall gate GaN HEMT | Keisuke Shinohara, Andrea Corrion, Paul Hashimoto, Shawn D. Burnham, Hooman Kazemi +2 more | 2014-07-01 |
| 8748244 | Enhancement and depletion mode GaN HMETs on the same substrate | Andrea Corrion, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham, Hooman Kazemi +1 more | 2014-06-10 |
| 8728884 | Enhancement mode normally-off gallium nitride heterostructure field effect transistor | Tahir Hussain, Wah S. Wong, Shawn D. Burnham | 2014-05-20 |
| 8698201 | Gate metallization methods for self-aligned sidewall gate GaN HEMT | Dean C. Regan, Keisuke Shinohara, Andrea Corrion, Ivan Milosavljevic, Peter J. Willadsen +4 more | 2014-04-15 |
| 8686473 | Apparatus and method for reducing the interface resistance in GaN heterojunction FETs | Andrea Corrion, Keisuke Shinohara, Peter J. Willadsen, Shawn D. Burnham, Hooman Kazemi +1 more | 2014-04-01 |
| 8617927 | Method of mounting electronic chips | Alexandros Margomenos | 2013-12-31 |
| 8592983 | Method of integrating a plurality of benzocyclobutene layers with a substrate and an associated device | Hasan Sharifi, Alexandros Margomenos, Ara K. Kurdoghlian, Keisuke Shinohara, Colleen M. Butler | 2013-11-26 |
| 8558281 | Gate metallization methods for self-aligned sidewall gate GaN HEMT | Dean C. Regan, Keisuke Shinohara, Andrea Corrion, Ivan Milosavljevic, Peter J. Willadsen +4 more | 2013-10-15 |
| 8470652 | Monolithic integration of group III nitride enhancement layers | David F. Brown, Keisuke Shinohara, Andrea Corrion | 2013-06-25 |
| 8383471 | Self aligned sidewall gate GaN HEMT | Keisuke Shinihara, Andrea Corrion, Paul Hashimoto, Shawn D. Burnham, Hooman Kazemi +2 more | 2013-02-26 |
| 8368119 | Integrated structure with transistors and schottky diodes and process for fabricating the same | Louis Luh, Keh-Chung Wang, Wah S. Wong, David H. Chow, Don Hitko | 2013-02-05 |
| 8030688 | Ohmic metal contact protection using an encapsulation layer | Tahir Hussain, Paul Hashimoto, Gary Peng, Ara K. Kurdoghlian | 2011-10-04 |
| 7989277 | Integrated structure with transistors and Schottky diodes and process for fabricating the same | Louis Luh, Keh-Chung Wang, Wah S. Wong, David H. Chow, Don Hitko | 2011-08-02 |