| 12402380 |
Nondestructive characterization for crystalline wafers |
Robert Tyler Leonard, Matthew David Conrad |
2025-08-26 |
|
| 12393214 |
Device design for short-circuit protection of transistors |
James Richmond, Philipp Steinmann |
2025-08-19 |
|
| 12376332 |
Edge termination structures for semiconductor devices |
Thomas E. Harrington, III |
2025-07-29 |
|
| 12322087 |
Multi-scale autoencoders for semiconductor workpiece understanding |
Matthew David Conrad |
2025-06-03 |
|
| 12237412 |
Protection structures for semiconductor devices with sensor arrangements |
Sei-Hyung Ryu |
2025-02-25 |
|
| 12159909 |
Power semiconductor device with reduced strain |
Daniel Jenner Lichtenwalner, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more |
2024-12-03 |
$32,549,000 |
| 12087854 |
Vertical semiconductor device with improved ruggedness |
Daniel Jenner Lichtenwalner, Sei-Hyung Ryu, Kijeong Han |
2024-09-10 |
$9,201,000 |
| 12074079 |
Wide bandgap semiconductor device with sensor element |
Joohyung Kim, Sei-Hyung Ryu, Kijeong Han, Thomas E. Harrington, III |
2024-08-27 |
$13,030,000 |
| 12057389 |
Transistor semiconductor die with increased active area |
Daniel Jenner Lichtenwalner |
2024-08-06 |
$15,265,000 |
| 12040355 |
Nondestructive characterization for crystalline wafers |
Robert Tyler Leonard, Matthew David Conrad |
2024-07-16 |
$48,633,000 |
| 11869948 |
Power semiconductor device with reduced strain |
Daniel Jenner Lichtenwalner, Thomas E. Harrington, III, Shadi Sabri, Brett Hull, Brice McPherson +1 more |
2024-01-09 |
$35,680,000 |
| 11837629 |
Power semiconductor devices having gate trenches and buried edge terminations and related methods |
Daniel Jenner Lichtenwalner, Brett Hull |
2023-12-05 |
$18,968,000 |
| 11810912 |
Semiconductor devices having asymmetric integrated gate resistors for balanced turn-on/turn-off behavior |
In-Hwan Ji, Jae Hyung Park |
2023-11-07 |
$60,001,000 |
| 11791378 |
Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods |
Alexander V. Suvorov, Vipindas Pala, Daniel Jenner Lichtenwalner, Qingchun Zhang |
2023-10-17 |
$21,302,000 |
| 11721755 |
Methods of forming semiconductor power devices having graded lateral doping |
Philipp Steinmann, Jae Hyung Park, Vaishno Dasika |
2023-08-08 |
$54,015,000 |
| 11662371 |
Semiconductor devices for improved measurements and related methods |
James Richmond |
2023-05-30 |
$23,376,000 |
| 11600724 |
Edge termination structures for semiconductor devices |
Thomas E. Harrington, III |
2023-03-07 |
$132,477,000 |
| 11579645 |
Device design for short-circuitry protection circuitry within transistors |
James Richmond, Philipp Steinmann |
2023-02-14 |
$76,953,000 |
| 11489069 |
Vertical semiconductor device with improved ruggedness |
Daniel Jenner Lichtenwalner, Sei-Hyung Ryu, Kijeong Han |
2022-11-01 |
$70,679,000 |
| 11417760 |
Vertical semiconductor device with improved ruggedness |
Daniel Jenner Lichtenwalner |
2022-08-16 |
$66,962,000 |
| 11361454 |
Alignment for wafer images |
Robert Tyler Leonard, Matthew David Conrad |
2022-06-14 |
$102,541,000 |
| 11282951 |
Semiconductor power devices having graded lateral doping in the source region |
Philipp Steinmann, Jae Hyung Park, Vaishno Dasika |
2022-03-22 |
$85,948,000 |
| 11282927 |
Contact structures for semiconductor devices |
Edward Lloyd Hutchins, Jae Hyung Park |
2022-03-22 |
|
| 11222955 |
Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices |
Daniel Jenner Lichtenwalner, Brett Hull, Shadi Sabri, Matt N. McCain |
2022-01-11 |
$84,661,000 |
| 11164813 |
Transistor semiconductor die with increased active area |
Daniel Jenner Lichtenwalner |
2021-11-02 |
$110,616,000 |