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Power semiconductor device with reduced strain |
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Power semiconductor device with reduced strain |
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Power semiconductor devices having gate trenches and buried edge terminations and related methods |
Daniel Jenner Lichtenwalner, Edward Robert Van Brunt |
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Semiconductor power devices having gate dielectric layers with improved breakdown characteristics and methods of forming such devices |
Daniel Jenner Lichtenwalner, Edward Robert Van Brunt, Shadi Sabri, Matt N. McCain |
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Power switching devices with high dV/dt capability and methods of making such devices |
Qingchun Zhang, Adam Barkley, Sei-Hyung Ryu |
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Transistor structures having a deep recessed P+ junction and methods for making same |
Qingchun Zhang |
2021-01-05 |
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Power semiconductor devices having gate trenches and buried edge terminations and related methods |
Daniel Jenner Lichtenwalner, Edward Robert Van Brunt |
2020-12-08 |
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Power semiconductor devices having top-side metallization structures that include buried grain stop layers |
Shadi Sabri, Daniel Jenner Lichtenwalner, Edward Robert Van Brunt, Scott Allen |
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Transistor structures having reduced electrical field at the gate oxide and methods for making same |
Qingchun Zhang |
2020-11-17 |
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Power switching devices with DV/DT capability and methods of making such devices |
Qingchun Zhang, Adam Barkley, Sei-Hyung Ryu |
2020-03-24 |
| 10510905 |
Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region |
Qingchun Zhang, Edward Robert Van Brunt, Scott Allen |
2019-12-17 |
| 10115815 |
Transistor structures having a deep recessed P+ junction and methods for making same |
Qingchun Zhang |
2018-10-30 |
| 10068834 |
Floating bond pad for power semiconductor devices |
Sarah Haney, Daniel Namishia |
2018-09-04 |
| 9887287 |
Power semiconductor devices having gate trenches with implanted sidewalls and related methods |
Daniel Jenner Lichtenwalner, Edward Robert Van Brunt, Alexander V. Suvorov, Craig Capell |
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Semiconductor devices including epitaxial layers and related methods |
Qingchun Zhang |
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Transistor structures having reduced electrical field at the gate oxide and methods for making same |
Qingchun Zhang |
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High power silicon carbide (SiC) PiN diodes having low forward voltage drops |
Mrinal K. Das, Joseph Sumakeris |
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Methods of forming SiC MOSFETs with high inversion layer mobility |
Mrinal K. Das, Sumi Krishnaswami |
2013-09-17 |
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Semiconductor devices including electrodes with integrated resistances |
Sei-Hyung Ryu, James Richmond |
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Methods of forming semiconductor devices including epitaxial layers and related structures |
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Methods of forming SiC MOSFETs with high inversion layer mobility |
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2010-06-01 |