JS

Joseph Sumakeris

CR Cree: 23 patents #61 of 639Top 10%
UF US Air Force: 1 patents #6,190 of 16,312Top 40%
Overall (All Time): #173,605 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9903046 Reduction of carrot defects in silicon carbide epitaxy Michael O'Loughlin 2018-02-27
9455356 High power silicon carbide (SiC) PiN diodes having low forward voltage drops Mrinal K. Das, Brett Hull 2016-09-27
9155131 Methods for controllably induction heating an article Michael James Paisley 2015-10-06
8536582 Stable power devices on low-angle off-cut silicon carbide crystals Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Augustus Burk, Jr., Michael O'Loughlin 2013-09-17
8430960 Deposition systems and susceptor assemblies for depositing a film on a substrate Michael James Paisley, Michael O'Loughlin 2013-04-30
8052794 Directed reagents to improve material uniformity Michael James Paisley, Michael O'Loughlin 2011-11-08
7880171 Minimizing degradation of SiC bipolar semiconductor devices Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more 2011-02-01
7427326 Minimizing degradation of SiC bipolar semiconductor devices Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more 2008-09-23
7390367 Housing assembly for an induction heating device including liner or susceptor coating Michael James Paisley 2008-06-24
7279115 Method to reduce stacking fault nucleation sites and reduce Vf drift in bipolar devices 2007-10-09
7230274 Reduction of carrot defects in silicon carbide epitaxy Michael O'Loughlin 2007-06-12
7226805 Sequential lithographic methods to reduce stacking fault nucleation sites Christer Hallin, Heinz Lendenmann 2007-06-05
7118781 Methods for controlling formation of deposits in a deposition system and deposition methods including the same Michael James Paisley, Michael O'Loughlin 2006-10-10
7109521 Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls Christer Hallin, Heinz Lendenmann 2006-09-19
7018554 Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices 2006-03-28
6974720 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby Hudson M. Hobgood, Michael James Paisley, Jason Jenny, Calvin H. Carter, Jr., Valeri F. Tsvetkov 2005-12-13
6896738 Induction heating devices and methods for controllably heating an article Michael James Paisley 2005-05-24
6849874 Minimizing degradation of SiC bipolar semiconductor devices Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more 2005-02-01
6797069 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers Michael James Paisley 2004-09-28
6653659 Silicon carbide inversion channel mosfets Sei-Hyung Ryu, Anant Agarwal, Ranbir Singh 2003-11-25
6569250 Gas-driven rotation apparatus and method for forming silicon carbide layers Michael James Paisley, Olle Kordina 2003-05-27
6530990 Susceptor designs for silicon carbide thin films Hua-Shuang Kong, Calvin H. Carter, Jr. 2003-03-11
6429041 Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation Sei-Hyung Ryu, Anant Agarwal, Ranbir Singh 2002-08-06
6217662 Susceptor designs for silicon carbide thin films Hua-Shuang Kong, Calvin H. Carter, Jr. 2001-04-17