Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9903046 | Reduction of carrot defects in silicon carbide epitaxy | Michael O'Loughlin | 2018-02-27 |
| 9455356 | High power silicon carbide (SiC) PiN diodes having low forward voltage drops | Mrinal K. Das, Brett Hull | 2016-09-27 |
| 9155131 | Methods for controllably induction heating an article | Michael James Paisley | 2015-10-06 |
| 8536582 | Stable power devices on low-angle off-cut silicon carbide crystals | Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Augustus Burk, Jr., Michael O'Loughlin | 2013-09-17 |
| 8430960 | Deposition systems and susceptor assemblies for depositing a film on a substrate | Michael James Paisley, Michael O'Loughlin | 2013-04-30 |
| 8052794 | Directed reagents to improve material uniformity | Michael James Paisley, Michael O'Loughlin | 2011-11-08 |
| 7880171 | Minimizing degradation of SiC bipolar semiconductor devices | Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more | 2011-02-01 |
| 7427326 | Minimizing degradation of SiC bipolar semiconductor devices | Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more | 2008-09-23 |
| 7390367 | Housing assembly for an induction heating device including liner or susceptor coating | Michael James Paisley | 2008-06-24 |
| 7279115 | Method to reduce stacking fault nucleation sites and reduce Vf drift in bipolar devices | — | 2007-10-09 |
| 7230274 | Reduction of carrot defects in silicon carbide epitaxy | Michael O'Loughlin | 2007-06-12 |
| 7226805 | Sequential lithographic methods to reduce stacking fault nucleation sites | Christer Hallin, Heinz Lendenmann | 2007-06-05 |
| 7118781 | Methods for controlling formation of deposits in a deposition system and deposition methods including the same | Michael James Paisley, Michael O'Loughlin | 2006-10-10 |
| 7109521 | Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls | Christer Hallin, Heinz Lendenmann | 2006-09-19 |
| 7018554 | Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices | — | 2006-03-28 |
| 6974720 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby | Hudson M. Hobgood, Michael James Paisley, Jason Jenny, Calvin H. Carter, Jr., Valeri F. Tsvetkov | 2005-12-13 |
| 6896738 | Induction heating devices and methods for controllably heating an article | Michael James Paisley | 2005-05-24 |
| 6849874 | Minimizing degradation of SiC bipolar semiconductor devices | Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more | 2005-02-01 |
| 6797069 | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers | Michael James Paisley | 2004-09-28 |
| 6653659 | Silicon carbide inversion channel mosfets | Sei-Hyung Ryu, Anant Agarwal, Ranbir Singh | 2003-11-25 |
| 6569250 | Gas-driven rotation apparatus and method for forming silicon carbide layers | Michael James Paisley, Olle Kordina | 2003-05-27 |
| 6530990 | Susceptor designs for silicon carbide thin films | Hua-Shuang Kong, Calvin H. Carter, Jr. | 2003-03-11 |
| 6429041 | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation | Sei-Hyung Ryu, Anant Agarwal, Ranbir Singh | 2002-08-06 |
| 6217662 | Susceptor designs for silicon carbide thin films | Hua-Shuang Kong, Calvin H. Carter, Jr. | 2001-04-17 |