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Reduction of carrot defects in silicon carbide epitaxy |
Michael O'Loughlin |
2018-02-27 |
| 9455356 |
High power silicon carbide (SiC) PiN diodes having low forward voltage drops |
Mrinal K. Das, Brett Hull |
2016-09-27 |
| 9155131 |
Methods for controllably induction heating an article |
Michael James Paisley |
2015-10-06 |
| 8536582 |
Stable power devices on low-angle off-cut silicon carbide crystals |
Qingchun Zhang, Anant Agarwal, Doyle Craig Capell, Albert Augustus Burk, Jr., Michael O'Loughlin |
2013-09-17 |
| 8430960 |
Deposition systems and susceptor assemblies for depositing a film on a substrate |
Michael James Paisley, Michael O'Loughlin |
2013-04-30 |
| 8052794 |
Directed reagents to improve material uniformity |
Michael James Paisley, Michael O'Loughlin |
2011-11-08 |
| 7880171 |
Minimizing degradation of SiC bipolar semiconductor devices |
Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more |
2011-02-01 |
| 7427326 |
Minimizing degradation of SiC bipolar semiconductor devices |
Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more |
2008-09-23 |
| 7390367 |
Housing assembly for an induction heating device including liner or susceptor coating |
Michael James Paisley |
2008-06-24 |
| 7279115 |
Method to reduce stacking fault nucleation sites and reduce Vf drift in bipolar devices |
— |
2007-10-09 |
| 7230274 |
Reduction of carrot defects in silicon carbide epitaxy |
Michael O'Loughlin |
2007-06-12 |
| 7226805 |
Sequential lithographic methods to reduce stacking fault nucleation sites |
Christer Hallin, Heinz Lendenmann |
2007-06-05 |
| 7118781 |
Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
Michael James Paisley, Michael O'Loughlin |
2006-10-10 |
| 7109521 |
Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls |
Christer Hallin, Heinz Lendenmann |
2006-09-19 |
| 7018554 |
Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices |
— |
2006-03-28 |
| 6974720 |
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
Hudson M. Hobgood, Michael James Paisley, Jason Jenny, Calvin H. Carter, Jr., Valeri F. Tsvetkov |
2005-12-13 |
| 6896738 |
Induction heating devices and methods for controllably heating an article |
Michael James Paisley |
2005-05-24 |
| 6849874 |
Minimizing degradation of SiC bipolar semiconductor devices |
Ranbir Singh, Michael James Paisley, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more |
2005-02-01 |
| 6797069 |
Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
Michael James Paisley |
2004-09-28 |
| 6653659 |
Silicon carbide inversion channel mosfets |
Sei-Hyung Ryu, Anant Agarwal, Ranbir Singh |
2003-11-25 |
| 6569250 |
Gas-driven rotation apparatus and method for forming silicon carbide layers |
Michael James Paisley, Olle Kordina |
2003-05-27 |
| 6530990 |
Susceptor designs for silicon carbide thin films |
Hua-Shuang Kong, Calvin H. Carter, Jr. |
2003-03-11 |
| 6429041 |
Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
Sei-Hyung Ryu, Anant Agarwal, Ranbir Singh |
2002-08-06 |
| 6217662 |
Susceptor designs for silicon carbide thin films |
Hua-Shuang Kong, Calvin H. Carter, Jr. |
2001-04-17 |