HH

Hudson M. Hobgood

CR Cree: 19 patents #83 of 639Top 15%
NG Northrop Grumman: 3 patents #288 of 2,250Top 15%
WE Westinghouse Electric: 2 patents #1,558 of 5,139Top 35%
Overall (All Time): #174,536 of 4,157,543Top 5%
24
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9059118 Method for producing semi-insulating resistivity in high purity silicon carbide crystals Jason Jenny, David Phillip Malta, Stephan Mueller, Valeri F. Tsvetkov 2015-06-16
8618553 Process for producing silicon carbide crystals having increased minority carrier lifetimes Calvin H. Carter, Jr., Jason Jenny, David Phillip Malta, Valeri F. Tsvetkov, Mrinal K. Das 2013-12-31
8163086 Halogen assisted physical vapor transport method for silicon carbide growth Stephan Mueller, Valeri F. Tsvetkov 2012-04-24
8147991 One hundred millimeter single crystal silicon carbide wafer Jason Jenny, David Phillip Malta, Stephan Mueller, Mark Brady, Robert Tyler Leonard +2 more 2012-04-03
7880171 Minimizing degradation of SiC bipolar semiconductor devices Joseph Sumakeris, Ranbir Singh, Michael James Paisley, Stephan Mueller, Calvin H. Carter, Jr. +1 more 2011-02-01
7811943 Process for producing silicon carbide crystals having increased minority carrier lifetimes Calvin H. Carter, Jr., Jason Jenny, David Phillip Malta, Valeri F. Tsvetkov, Mrinal K. Das 2010-10-12
7615801 High voltage silicon carbide devices having bi-directional blocking capabilities Sei-Hyung Ryu, Jason Jenny, Mrinal K. Das, Anant Agarwal, John Williams Palmour 2009-11-10
7601441 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer Jason Jenny, David Phillip Malta, Stephan Mueller, Mark Brady, Robert Tyler Leonard +2 more 2009-10-13
7427326 Minimizing degradation of SiC bipolar semiconductor devices Joseph Sumakeris, Ranbir Singh, Michael James Paisley, Stephan Mueller, Calvin H. Carter, Jr. +1 more 2008-09-23
7414268 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Sei-Hyung Ryu, Jason Jenny, Mrinal K. Das, Anant Agarwal, John Williams Palmour 2008-08-19
7391057 High voltage silicon carbide devices having bi-directional blocking capabilities Sei-Hyung Ryu, Jason Jenny, Mrinal K. Das, Anant Agarwal, John Williams Palmour 2008-06-24
7323051 One hundred millimeter single crystal silicon carbide wafer Jason Jenny, David Phillip Malta, Valeri F. Tsvetkov, Calvin H. Carter, Jr., Robert Tyler Leonard +1 more 2008-01-29
7316747 Seeded single crystal silicon carbide growth and resulting crystals Jason Jenny, David Phillip Malta, Stephan Mueller, Mark Brady, Robert Tyler Leonard +4 more 2008-01-08
7220313 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient George J. Fechko, Jr., Jason Jenny, Valeri F. Tsvetkov, Calvin H. Carter, Jr. 2007-05-22
7147715 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen David Phillip Malta, Jason Jenny, Valeri F. Tsvetkov 2006-12-12
6974720 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby Joseph Sumakeris, Michael James Paisley, Jason Jenny, Calvin H. Carter, Jr., Valeri F. Tsvetkov 2005-12-13
6964917 Semi-insulating silicon carbide produced by Neutron transmutation doping Valeri F. Tsvetkov, Calvin H. Carter, Jr., Jason Jenny 2005-11-15
6849874 Minimizing degradation of SiC bipolar semiconductor devices Joseph Sumakeris, Ranbir Singh, Michael James Paisley, Stephan Mueller, Calvin H. Carter, Jr. +1 more 2005-02-01
6814801 Method for producing semi-insulating resistivity in high purity silicon carbide crystals Jason Jenny, David Phillip Malta, Stephan Mueller, Valeri F. Tsvetokov 2004-11-09
5937317 Method of making a low resistivity silicon carbide boule Donovan L. Barrett, Richard H. Hopkins, James P. McHugh 1999-08-10
5667587 Apparatus for growing silicon carbide crystals Robert C. Glass, Walter E. Gaida, Ronald R. Ronallo 1997-09-16
5611955 High resistivity silicon carbide substrates for high power microwave devices Donovan L. Barrett, James P. McHugh, Richard H. Hopkins 1997-03-18
5501173 Method for epitaxially growing .alpha.-silicon carbide on a-axis .alpha.-silicon carbide substrates Albert Augustus Burk, Jr., Donovan L. Barrett, Rowland C. Clarke, Graeme W. Eldridge, Charles D. Brandt 1996-03-26
4594173 Indium doped gallium arsenide crystals and method of preparation Richard N. Thomas, Donovan L. Barrett 1986-06-10