| 12125701 |
Large dimension silicon carbide single crystalline materials with reduced crystallographic stress |
Yuri Khlebnikov, Varad R. Sakhalkar, Caleb A. Kent, Valeri F. Tsvetkov, Oleksandr Kramarenko +12 more |
2024-10-22 |
| 12054850 |
Large diameter silicon carbide wafers |
Yuri Khlebnikov, Varad R. Sakhalkar, Caleb A. Kent, Valeri F. Tsvetkov, Oleksandr Kramarenko +8 more |
2024-08-06 |
| 11519098 |
Dislocation distribution for silicon carbide crystalline materials |
Yuri Khlebnikov, Robert Tyler Leonard, Elif Balkas, Steven Griffiths, Valeri F. Tsvetkov |
2022-12-06 |
| 9155131 |
Methods for controllably induction heating an article |
Joseph Sumakeris |
2015-10-06 |
| 8430960 |
Deposition systems and susceptor assemblies for depositing a film on a substrate |
Joseph Sumakeris, Michael O'Loughlin |
2013-04-30 |
| 8052794 |
Directed reagents to improve material uniformity |
Joseph Sumakeris, Michael O'Loughlin |
2011-11-08 |
| 7880171 |
Minimizing degradation of SiC bipolar semiconductor devices |
Joseph Sumakeris, Ranbir Singh, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more |
2011-02-01 |
| 7427326 |
Minimizing degradation of SiC bipolar semiconductor devices |
Joseph Sumakeris, Ranbir Singh, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more |
2008-09-23 |
| 7390367 |
Housing assembly for an induction heating device including liner or susceptor coating |
Joseph Sumakeris |
2008-06-24 |
| 7118781 |
Methods for controlling formation of deposits in a deposition system and deposition methods including the same |
Joseph Sumakeris, Michael O'Loughlin |
2006-10-10 |
| 6974720 |
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
Joseph Sumakeris, Hudson M. Hobgood, Jason Jenny, Calvin H. Carter, Jr., Valeri F. Tsvetkov |
2005-12-13 |
| 6896738 |
Induction heating devices and methods for controllably heating an article |
Joseph Sumakeris |
2005-05-24 |
| 6849874 |
Minimizing degradation of SiC bipolar semiconductor devices |
Joseph Sumakeris, Ranbir Singh, Stephan Mueller, Hudson M. Hobgood, Calvin H. Carter, Jr. +1 more |
2005-02-01 |
| 6824611 |
Method and apparatus for growing silicon carbide crystals |
Olle Kordina |
2004-11-30 |
| 6797069 |
Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
Joseph Sumakeris |
2004-09-28 |
| 6569250 |
Gas-driven rotation apparatus and method for forming silicon carbide layers |
Joseph Sumakeris, Olle Kordina |
2003-05-27 |
| 6297522 |
Highly uniform silicon carbide epitaxial layers |
Olle Kordina, Kenneth George Irvine |
2001-10-02 |
| 6063186 |
Growth of very uniform silicon carbide epitaxial layers |
Kenneth George Irvine, Olle Kordina |
2000-05-16 |