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Micropipe-free silicon carbide and related method of manufacture |
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Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Valeri F. Tsvetkov |
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Process for producing silicon carbide crystals having increased minority carrier lifetimes |
Calvin H. Carter, Jr., David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das |
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Micropipe-free silicon carbide and related method of manufacture |
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One hundred millimeter single crystal silicon carbide wafer |
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Process for producing silicon carbide crystals having increased minority carrier lifetimes |
Calvin H. Carter, Jr., David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das |
2010-10-12 |
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High voltage silicon carbide devices having bi-directional blocking capabilities |
Sei-Hyung Ryu, Mrinal K. Das, Anant Agarwal, John Williams Palmour, Hudson M. Hobgood |
2009-11-10 |
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One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
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2009-10-13 |
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High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
Sei-Hyung Ryu, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour |
2008-08-19 |
| 7391057 |
High voltage silicon carbide devices having bi-directional blocking capabilities |
Sei-Hyung Ryu, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour |
2008-06-24 |
| 7323051 |
One hundred millimeter single crystal silicon carbide wafer |
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| 7323052 |
Apparatus and method for the production of bulk silicon carbide single crystals |
Valeri F. Tsvetkov, David Phillip Malta |
2008-01-29 |
| 7319518 |
Double side polished wafer scratch inspection tool |
Robert Tyler Leonard |
2008-01-15 |
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Seeded single crystal silicon carbide growth and resulting crystals |
David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +4 more |
2008-01-08 |
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Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
George J. Fechko, Jr., Hudson M. Hobgood, Valeri F. Tsvetkov, Calvin H. Carter, Jr. |
2007-05-22 |
| 7147715 |
Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov |
2006-12-12 |
| 6974720 |
Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
Joseph Sumakeris, Hudson M. Hobgood, Michael James Paisley, Calvin H. Carter, Jr., Valeri F. Tsvetkov |
2005-12-13 |
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Semi-insulating silicon carbide produced by Neutron transmutation doping |
Valeri F. Tsvetkov, Hudson M. Hobgood, Calvin H. Carter, Jr. |
2005-11-15 |
| 6814801 |
Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Valeri F. Tsvetokov |
2004-11-09 |