JJ

Jason Jenny

CR Cree: 19 patents #83 of 639Top 15%
Overall (All Time): #239,908 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9099377 Micropipe-free silicon carbide and related method of manufacture Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan +6 more 2015-08-04
9059118 Method for producing semi-insulating resistivity in high purity silicon carbide crystals David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Valeri F. Tsvetkov 2015-06-16
8618553 Process for producing silicon carbide crystals having increased minority carrier lifetimes Calvin H. Carter, Jr., David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das 2013-12-31
8410488 Micropipe-free silicon carbide and related method of manufacture Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan +6 more 2013-04-02
8147991 One hundred millimeter single crystal silicon carbide wafer David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +2 more 2012-04-03
7811943 Process for producing silicon carbide crystals having increased minority carrier lifetimes Calvin H. Carter, Jr., David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das 2010-10-12
7615801 High voltage silicon carbide devices having bi-directional blocking capabilities Sei-Hyung Ryu, Mrinal K. Das, Anant Agarwal, John Williams Palmour, Hudson M. Hobgood 2009-11-10
7601441 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +2 more 2009-10-13
7414268 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Sei-Hyung Ryu, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour 2008-08-19
7391057 High voltage silicon carbide devices having bi-directional blocking capabilities Sei-Hyung Ryu, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour 2008-06-24
7323051 One hundred millimeter single crystal silicon carbide wafer Hudson M. Hobgood, David Phillip Malta, Valeri F. Tsvetkov, Calvin H. Carter, Jr., Robert Tyler Leonard +1 more 2008-01-29
7323052 Apparatus and method for the production of bulk silicon carbide single crystals Valeri F. Tsvetkov, David Phillip Malta 2008-01-29
7319518 Double side polished wafer scratch inspection tool Robert Tyler Leonard 2008-01-15
7316747 Seeded single crystal silicon carbide growth and resulting crystals David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +4 more 2008-01-08
7220313 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient George J. Fechko, Jr., Hudson M. Hobgood, Valeri F. Tsvetkov, Calvin H. Carter, Jr. 2007-05-22
7147715 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov 2006-12-12
6974720 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby Joseph Sumakeris, Hudson M. Hobgood, Michael James Paisley, Calvin H. Carter, Jr., Valeri F. Tsvetkov 2005-12-13
6964917 Semi-insulating silicon carbide produced by Neutron transmutation doping Valeri F. Tsvetkov, Hudson M. Hobgood, Calvin H. Carter, Jr. 2005-11-15
6814801 Method for producing semi-insulating resistivity in high purity silicon carbide crystals David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Valeri F. Tsvetokov 2004-11-09