Issued Patents All Time
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9099377 | Micropipe-free silicon carbide and related method of manufacture | Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan +6 more | 2015-08-04 |
| 9059118 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Valeri F. Tsvetkov | 2015-06-16 |
| 8618553 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Calvin H. Carter, Jr., David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das | 2013-12-31 |
| 8410488 | Micropipe-free silicon carbide and related method of manufacture | Cem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan +6 more | 2013-04-02 |
| 8147991 | One hundred millimeter single crystal silicon carbide wafer | David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +2 more | 2012-04-03 |
| 7811943 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Calvin H. Carter, Jr., David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov, Mrinal K. Das | 2010-10-12 |
| 7615801 | High voltage silicon carbide devices having bi-directional blocking capabilities | Sei-Hyung Ryu, Mrinal K. Das, Anant Agarwal, John Williams Palmour, Hudson M. Hobgood | 2009-11-10 |
| 7601441 | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer | David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +2 more | 2009-10-13 |
| 7414268 | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities | Sei-Hyung Ryu, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour | 2008-08-19 |
| 7391057 | High voltage silicon carbide devices having bi-directional blocking capabilities | Sei-Hyung Ryu, Mrinal K. Das, Hudson M. Hobgood, Anant Agarwal, John Williams Palmour | 2008-06-24 |
| 7323051 | One hundred millimeter single crystal silicon carbide wafer | Hudson M. Hobgood, David Phillip Malta, Valeri F. Tsvetkov, Calvin H. Carter, Jr., Robert Tyler Leonard +1 more | 2008-01-29 |
| 7323052 | Apparatus and method for the production of bulk silicon carbide single crystals | Valeri F. Tsvetkov, David Phillip Malta | 2008-01-29 |
| 7319518 | Double side polished wafer scratch inspection tool | Robert Tyler Leonard | 2008-01-15 |
| 7316747 | Seeded single crystal silicon carbide growth and resulting crystals | David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady, Robert Tyler Leonard +4 more | 2008-01-08 |
| 7220313 | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient | George J. Fechko, Jr., Hudson M. Hobgood, Valeri F. Tsvetkov, Calvin H. Carter, Jr. | 2007-05-22 |
| 7147715 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen | David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov | 2006-12-12 |
| 6974720 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby | Joseph Sumakeris, Hudson M. Hobgood, Michael James Paisley, Calvin H. Carter, Jr., Valeri F. Tsvetkov | 2005-12-13 |
| 6964917 | Semi-insulating silicon carbide produced by Neutron transmutation doping | Valeri F. Tsvetkov, Hudson M. Hobgood, Calvin H. Carter, Jr. | 2005-11-15 |
| 6814801 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Valeri F. Tsvetokov | 2004-11-09 |