Issued Patents All Time
Showing 25 most recent of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12362740 | Transistor switching based on voltage sensing | Rajdeep Bondade, Maxim Franke, Stephen Phillip Savage, Johan Tjeerd Strydom | 2025-07-15 |
| 12046998 | High speed, efficient SiC power module | Adam Barkley, Henry Lin, Marcelo Schupbach | 2024-07-23 |
| 11961879 | IC including capacitor having segmented bottom plate | Jeffrey Alan West, Byron Lovell Williams, Thomas D. Bonifield, Maxim Franke | 2024-04-16 |
| 11888392 | High speed, efficient sic power module | Adam Barkley, Henry Lin, Marcelo Schupbach | 2024-01-30 |
| 11716078 | Transistor switching based on voltage sensing | Rajdeep Bondade, Maxim Franke, Stephen Phillip Savage, Johan Tjeerd Strydom | 2023-08-01 |
| 11688760 | IC including capacitor having segmented bottom plate | Jeffrey Alan West, Byron Lovell Williams, Thomas D. Bonifield, Maxim Franke | 2023-06-27 |
| 11171229 | Low switching loss high performance power module | Robert J. Callanan, Henry Lin, John Williams Palmour | 2021-11-09 |
| 10707858 | Power module with improved reliability | Adam Barkley, Brian Fetzer, Jonathan D. Young, Van Mieczkowski, Scott Allen | 2020-07-07 |
| 10680518 | High speed, efficient SiC power module | Adam Barkley, Henry Lin, Marcelo Schupbach | 2020-06-09 |
| 10181532 | Low loss electronic devices having increased doping for reduced resistance and methods of forming the same | Doyle Craig Capell | 2019-01-15 |
| 10141302 | High current, low switching loss SiC power module | Henry Lin, Marcelo Schupbach, John Williams Palmour | 2018-11-27 |
| 9998109 | Power module with improved reliability | Adam Barkley, Brian Fetzer, Jonathan D. Young, Van Mieczkowski, Scott Allen | 2018-06-12 |
| 9640617 | High performance power module | Robert J. Callanan, Henry Lin, John Williams Palmour | 2017-05-02 |
| 9552997 | Silicon carbide switching devices including P-type channels | Qingchun Zhang, Sei-Hyung Ryu | 2017-01-24 |
| 9455356 | High power silicon carbide (SiC) PiN diodes having low forward voltage drops | Brett Hull, Joseph Sumakeris | 2016-09-27 |
| 9373617 | High current, low switching loss SiC power module | Henry Lin, Marcelo Schupbach, John Williams Palmour | 2016-06-21 |
| 9142663 | Silicon carbide devices having smooth channels | Michael P. Laughner | 2015-09-22 |
| 8866150 | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts | Qingchun Zhang, John M. Clayton, Jr., Matthew Donofrio | 2014-10-21 |
| 8859366 | Methods of fabricating silicon carbide devices having smooth channels | Michael P. Laughner | 2014-10-14 |
| 8618553 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Calvin H. Carter, Jr., Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov | 2013-12-31 |
| 8536066 | Methods of forming SiC MOSFETs with high inversion layer mobility | Brett Hull, Sumi Krishnaswami | 2013-09-17 |
| 8188483 | Silicon carbide devices having smooth channels | Michael P. Laughner | 2012-05-29 |
| 8119539 | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen | Anant Agarwal, John Williams Palmour, Dave Grider | 2012-02-21 |
| 7883949 | Methods of forming silicon carbide switching devices including P-type channels | Qingchun Zhang, Sei-Hyung Ryu | 2011-02-08 |
| 7811943 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Calvin H. Carter, Jr., Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Valeri F. Tsvetkov | 2010-10-12 |