Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof

Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof

US Patent 11682709 · Granted Jun 20, 2023

Estimated economic value: $49,893,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical power devices having mesas and etched trenches therebetween2025
Support shield structures for trenched semiconductor devices2025
Vertical power devices fabricated using implanted methods2025
Power semiconductor devices including a trenched gate and methods of forming suc2025
Trench bottom shielding methods and approaches for trenched semiconductor device2025
FinFET power semiconductor devices2024
Power semiconductor device with reduced strain2024
Conduction enhancement layers for electrical contact regions in power devices2024
Sidewall dopant shielding methods and approaches for trenched semiconductor devi2024
Vertical semiconductor device with improved ruggedness2024
Power semiconductor devices including angled gate trenches2024
Transistor semiconductor die with increased active area2024