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Plasma-based barrier layer removal method for increasing peak transconductance while maintaining on-state resistance and related devices |
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Jia Guo, Scott Sheppard |
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Chloe Hawes, Jennifer Gao, Scott Sheppard |
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Evan Jones, Saptha Sriram |
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Evan Jones |
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Joshua Bisges |
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High electron mobility transistors having improved performance |
Joshua Bisges |
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Encapsulation stack for improved humidity performance and related fabrication methods |
Chris Hardiman, Daniel Namishia, Elizabeth Keenan |
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Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance |
Jia Guo, Jeremy Fisher, Scott Sheppard |
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Field effect transistor with source-connected field plate |
Jeremy Fisher, Matt King, Jia Guo, Qianli Mu, Scott Sheppard |
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Field effect transistor with enhanced reliability |
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High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
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Field effect transistor with at least partially recessed field plate |
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High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
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High electron mobility transistors having improved contact spacing and/or improved contact vias |
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Packaged electronic circuits having moisture protection encapsulation and methods of forming same |
Dan Namishia, Fabian Radulescu, Scott Sheppard |
2020-10-20 |