Issued Patents All Time
Showing 51–75 of 106 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9312256 | Bidirectional silicon carbide transient voltage supression devices | Sarah Haney | 2016-04-12 |
| 9269580 | Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof | Sarit Dhar, Lin Cheng, Anant Agarwal, John Williams Palmour, Jason Gurganus | 2016-02-23 |
| 9231122 | Schottky diode | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2016-01-05 |
| 9184237 | Vertical power transistor with built-in gate buffer | Craig Capell, Charlotte Jonas, David Grider | 2015-11-10 |
| 9142662 | Field effect transistor devices with low source resistance | Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas, Anant Agarwal +1 more | 2015-09-22 |
| 9136371 | Monolithic bidirectional silicon carbide switching devices | — | 2015-09-15 |
| 9029945 | Field effect transistor devices with low source resistance | Doyle Craig Capell, Lin Cheng, Sarit Dhar, Charlotte Jonas, Anant Agarwal +1 more | 2015-05-12 |
| 8901639 | Monolithic bidirectional silicon carbide switching devices | — | 2014-12-02 |
| 8901699 | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection | Anant Agarwal | 2014-12-02 |
| 8841682 | Transistors with a gate insulation layer having a channel depleting interfacial charge and related fabrication methods | Sarit Dhar | 2014-09-23 |
| 8803277 | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same | Jason Henning, Qingchun Zhang | 2014-08-12 |
| 8710510 | High power insulated gate bipolar transistors | Qingchun Zhang, Charlotte Jonas, Anant Agarwal | 2014-04-29 |
| 8680587 | Schottky diode | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2014-03-25 |
| 8664665 | Schottky diode employing recesses for elements of junction barrier array | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2014-03-04 |
| 8653534 | Junction Barrier Schottky diodes with current surge capability | Qingchun Zhang | 2014-02-18 |
| 8629509 | High voltage insulated gate bipolar transistors with minority carrier diverter | Qingchun Zhang | 2014-01-14 |
| 8618582 | Edge termination structure employing recesses for edge termination elements | Jason Henning, Qingchun Zhang, Anant Agarwal, John Williams Palmour, Scott Allen | 2013-12-31 |
| 8610130 | Monolithic high voltage switching devices | Qingchun Zhang | 2013-12-17 |
| 8546874 | Power switching semiconductor devices including rectifying junction-shunts | Allen Hefner, Anant Agarwal | 2013-10-01 |
| 8492827 | Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors | — | 2013-07-23 |
| 8445917 | Bidirectional silicon carbide transient voltage suppression devices | Sarah Haney | 2013-05-21 |
| 8384181 | Schottky diode structure with silicon mesa and junction barrier Schottky wells | Qingchun Zhang | 2013-02-26 |
| 8354690 | Solid-state pinch off thyristor circuits | Robert J. Callanan, Qingchun Zhang | 2013-01-15 |
| 8330244 | Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same | Qingchun Zhang, Anant Agarwal | 2012-12-11 |
| 8314462 | Semiconductor devices including electrodes with integrated resistances | Brett Hull, James Richmond | 2012-11-20 |