Issued Patents All Time
Showing 26–50 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11356070 | RF amplifiers having shielded transmission line structures | Kwangmo Chris Lim, Basim Noori, Qianli Mu, Marvin Marbell, Alexander Komposch | 2022-06-07 |
| 11355600 | High electron mobility transistors having improved drain current drift and/or leakage current performance | Kyoung-Keun Lee, Fabian Radulescu | 2022-06-07 |
| 11316028 | Nitride-based transistors with a protective layer and a low-damage recess | Richard Peter Smith, Zoltan Ring | 2022-04-26 |
| 11239802 | Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance | Qianli Mu, Zulhazmi Mokhti, Jia Guo | 2022-02-01 |
| 11152325 | Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys | Alexander Komposch, Kevin Shawne Schneider | 2021-10-19 |
| 11075271 | Stepped field plates with proximity to conduction channel and related fabrication methods | Evan Jones, Terry Alcorn, Jia Guo, Fabian Radulescu | 2021-07-27 |
| 10978583 | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity | Yueying Liu, Saptharishi Sriram, Jennifer Gao | 2021-04-13 |
| 10971612 | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability | Kyle Bothe, Evan Jones, Dan Namishia, Chris Hardiman, Fabian Radulescu +2 more | 2021-04-06 |
| 10937873 | High electron mobility transistors having improved drain current drift and/or leakage current performance | Kyoung-Keun Lee, Fabian Radulescu | 2021-03-02 |
| 10923585 | High electron mobility transistors having improved contact spacing and/or improved contact vias | Kyle Bothe, Evan Jones, Dan Namishia, Chris Hardiman, Fabian Radulescu +1 more | 2021-02-16 |
| 10886189 | Semiconductor die with improved ruggedness | Chris Hardiman, Kyoung-Keun Lee, Fabian Radulescu, Daniel Namishia | 2021-01-05 |
| 10861963 | Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors | Saptharishi Sriram, Jennifer Gao, Jeremy Fisher | 2020-12-08 |
| 10811370 | Packaged electronic circuits having moisture protection encapsulation and methods of forming same | Kyle Bothe, Dan Namishia, Fabian Radulescu | 2020-10-20 |
| 10615273 | Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity | Yueying Liu, Saptharishi Sriram | 2020-04-07 |
| 10516043 | Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors | Saptharishi Sriram, Jennifer Gao, Jeremy Fisher | 2019-12-24 |
| 10367074 | Method of forming vias in silicon carbide and resulting devices and circuits | Zoltan Ring, Helmut Hagleitner | 2019-07-30 |
| 10332817 | Semiconductor die with improved ruggedness | Chris Hardiman, Kyoung-Keun Lee, Fabian Radulescu, Daniel Namishia | 2019-06-25 |
| 9984881 | Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices | Alexander V. Suvorov | 2018-05-29 |
| 9934983 | Stress mitigation for thin and thick films used in semiconductor circuitry | Zoltan Ring, Donald A. Gajewski, Daniel Namishia | 2018-04-03 |
| 9847411 | Recessed field plate transistor structures | Saptharishi Sriram, Terry Alcorn, Fabian Radulescu | 2017-12-19 |
| 9786660 | Transistor with bypassed gate structure field | Donald Farrell, Simon Wood, Dan Namishia | 2017-10-10 |
| 9711633 | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions | R. Peter Smith, Yifeng Wu, Sten Heikman, Matthew Jacob-Mitos | 2017-07-18 |
| 9679981 | Cascode structures for GaN HEMTs | Saptharishi Sriram, Terry Alcorn, Fabian Radulescu | 2017-06-13 |
| 9666707 | Nitride-based transistors with a cap layer and a recessed gate | Richard Peter Smith | 2017-05-30 |
| 9490169 | Method of forming vias in silicon carbide and resulting devices and circuits | Zoltan Ring, Helmut Hagleitner | 2016-11-08 |