Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9711633 | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions | Scott Sheppard, Yifeng Wu, Sten Heikman, Matthew Jacob-Mitos | 2017-07-18 |
| 8105889 | Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions | Scott Sheppard | 2012-01-31 |
| 5907305 | Dual polarized, heat spreading rectenna | Larry W. Epp, Abdur R. Khan, Hugh K. Smith | 1999-05-25 |