Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

US Patent 9711633 · Granted Jul 18, 2017

Estimated economic value: $3,818,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RF amplifier devices and methods of manufacturing including modularized designs 2025
High electron mobility transistors having reduced drain current drift and method2025
IPD components having SiC substrates and devices and processes implementing the 2025
Field effect transistor with stacked unit subcell structure2025
Field effect transistor with selective channel layer doping2025
Laser-based integrated light source2025
Integrated design for III-Nitride devices2025
Laser-phosphor integrated light source2025
Laser high beam and low beam headlamp apparatus2025
Field effect transistor with multiple stepped field plate2025
Radio frequency transistor amplifiers having self-aligned double implanted sourc2025
High-luminous flux laser-based white light source2025