Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Field effect transistor with selective channel layer doping

Field effect transistor with selective channel layer doping

US Patent 12402348 · Granted Aug 26, 2025

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RF amplifier devices and methods of manufacturing including modularized designs 2025
Group III-nitride high-electron mobility transistors with gate connected buried 2025
Group III-nitride high-electron mobility transistors with buried p-type layers a2025
High electron mobility transistors having reduced drain current drift and method2025
IPD components having SiC substrates and devices and processes implementing the 2025
Field effect transistor with stacked unit subcell structure2025
Field effect transistor with stacked unit subcell structure2025
Circuits and group III-nitride transistors with buried p-layers and controlled g2025
Group III-nitride high-electron mobility transistors with a buried metallic cond2025
Field effect transistor with multiple stepped field plate2025
Field effect transistor with multiple stepped field plate2025
Radio frequency transistor amplifiers having self-aligned double implanted sourc2025