Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

US Patent 12477770 · Granted Nov 18, 2025

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Group III-nitride high-electron mobility transistors with gate connected buried 2025
Scale having a machine-readable code display2025
Circuits and group III-nitride transistors with buried p-layers and controlled g2025
Field effect transistor with selective channel layer doping2025
Group III-nitride high-electron mobility transistors with a buried metallic cond2025
Log-splitting machine2025
Gallium Nitride high-electron mobility transistors with p-type layers and proces2024
Semiconductor devices having unit cell transistors with smoothed turn-on behavio2024
Circuits and group III-nitride high-electron mobility transistors with buried p-2024
Group III-nitride high-electron mobility transistors with buried p-type layers a2024
Group III-nitride high-electron mobility transistors with buried p-type layers a2024
Group III-nitride high-electron mobility transistors with buried p-type layers a2024