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Home › Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same

Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same

US Patent 11929428 · Granted Mar 12, 2024

Estimated economic value: $27,421,000 ⓘ

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