Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity

Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity

US Patent 12034072 · Granted Jul 9, 2024

Estimated economic value: $28,228,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

RF amplifier devices and methods of manufacturing including modularized designs 2025
Group III-nitride high-electron mobility transistors with gate connected buried 2025
Group III-nitride high-electron mobility transistors with buried p-type layers a2025
High electron mobility transistors having reduced drain current drift and method2025
IPD components having SiC substrates and devices and processes implementing the 2025
Field effect transistor with stacked unit subcell structure2025
Field effect transistor with stacked unit subcell structure2025
Circuits and group III-nitride transistors with buried p-layers and controlled g2025
Field effect transistor with selective channel layer doping2025
Field effect transistor with selective channel layer doping2025
Group III-nitride high-electron mobility transistors with a buried metallic cond2025
Field effect transistor with multiple stepped field plate2025