Issued Patents All Time
Showing 51–75 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9318594 | Semiconductor devices including implanted regions and protective layers | Adam William Saxler | 2016-04-19 |
| 9224596 | Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers | Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Richard Peter Smith | 2015-12-29 |
| 9166033 | Methods of passivating surfaces of wide bandgap semiconductor devices | Adam William Saxler, Richard Peter Smith | 2015-10-20 |
| 9142636 | Methods of fabricating nitride-based transistors with an ETCH stop layer | Andrew Mackenzie, Scott Allen, Richard Peter Smith | 2015-09-22 |
| 9040398 | Method of fabricating seminconductor devices including self aligned refractory contacts | Adam William Saxler | 2015-05-26 |
| 8946777 | Nitride-based transistors having laterally grown active region and methods of fabricating same | Adam William Saxler, Richard Peter Smith | 2015-02-03 |
| 8823057 | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices | Alexander V. Suvorov | 2014-09-02 |
| 8803198 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Richard Peter Smith, Adam William Saxler, Yifeng Wu | 2014-08-12 |
| 8575651 | Devices having thick semi-insulating epitaxial gallium nitride layer | Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Richard Peter Smith | 2013-11-05 |
| 8563372 | Methods of forming contact structures including alternating metal and silicon layers and related devices | Helmut Hagleitner, Zoltan Ring, Jason Henning, Jason Gurganus, Dan Namishia | 2013-10-22 |
| 8502235 | Integrated nitride and silicon carbide-based devices | Adam William Saxler, Thomas J. Smith | 2013-08-06 |
| 8481376 | Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices | Adam William Saxler | 2013-07-09 |
| 8357571 | Methods of forming semiconductor contacts | Fabian Radulescu, Jennifer Gao, Jennifer Duc | 2013-01-22 |
| 8212289 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Richard Peter Smith, Adam William Saxler, Yifeng Wu | 2012-07-03 |
| 8202796 | Method of forming vias in silicon carbide and resulting devices and circuits | Zoltan Ring, Helmut Hagleitner | 2012-06-19 |
| 8105889 | Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions | R. Peter Smith | 2012-01-31 |
| 8049252 | Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices | Richard Peter Smith | 2011-11-01 |
| 8035111 | Integrated nitride and silicon carbide-based devices | — | 2011-10-11 |
| 7960756 | Transistors including supported gate electrodes | Scott Allen | 2011-06-14 |
| 7906799 | Nitride-based transistors with a protective layer and a low-damage recess | Richard Peter Smith, Zoltan Ring | 2011-03-15 |
| 7901994 | Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers | Adam William Saxler | 2011-03-08 |
| 7898047 | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices | — | 2011-03-01 |
| 7892974 | Method of forming vias in silicon carbide and resulting devices and circuits | Zoltan Ring, Helmut Hagleitner | 2011-02-22 |
| 7875537 | High temperature ion implantation of nitride based HEMTs | Alexander V. Suvorov | 2011-01-25 |
| 7875914 | Switch mode power amplifier using mis-HEMT with field plate extension | — | 2011-01-25 |