Issued Patents All Time
Showing 76–99 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7875910 | Integrated nitride and silicon carbide-based devices | Adam William Saxler, Thomas J. Smith | 2011-01-25 |
| 7858460 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more | 2010-12-28 |
| 7855401 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Richard Peter Smith, Zoltan Ring | 2010-12-21 |
| 7709269 | Methods of fabricating transistors including dielectrically-supported gate electrodes | Richard Peter Smith | 2010-05-04 |
| 7709859 | Cap layers including aluminum nitride for nitride-based transistors | Richard Peter Smith, Adam William Saxler | 2010-05-04 |
| 7678628 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate | Richard Peter Smith | 2010-03-16 |
| 7592211 | Methods of fabricating transistors including supported gate electrodes | Scott Allen | 2009-09-22 |
| 7550784 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | Adam William Saxler, Richard Peter Smith | 2009-06-23 |
| 7548112 | Switch mode power amplifier using MIS-HEMT with field plate extension | — | 2009-06-16 |
| 7525122 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more | 2009-04-28 |
| 7465967 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Richard Peter Smith, Adam William Saxler, Yifeng Wu | 2008-12-16 |
| 7456443 | Transistors having buried n-type and p-type regions beneath the source region | Adam William Saxler, Richard Peter Smith | 2008-11-25 |
| 7419892 | Semiconductor devices including implanted regions and protective layers and methods of forming the same | Adam William Saxler | 2008-09-02 |
| 7332795 | Dielectric passivation for semiconductor devices | Richard Peter Smith, John Williams Palmour | 2008-02-19 |
| 7238560 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate | Richard Peter Smith | 2007-07-03 |
| 7125786 | Method of forming vias in silicon carbide and resulting devices and circuits | Zoltan Ring, Helmut Hagleitner | 2006-10-24 |
| 7045404 | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof | Richard Peter Smith, Zoltan Ring | 2006-05-16 |
| 6998322 | Methods of fabricating high voltage, high temperature capacitor and interconnection structures | Mrinal K. Das, Lori A. Lipkin, John Williams Palmour, Helmut Hagleitner | 2006-02-14 |
| 6982204 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | Adam William Saxler, Richard Peter Smith | 2006-01-03 |
| 6972436 | High voltage, high temperature capacitor and interconnection structures | Mrinal K. Das, Lori A. Lipkin, John Williams Palmour, Helmut Hagleitner | 2005-12-06 |
| 6583454 | Nitride based transistors on semi-insulating silicon carbide substrates | Scott Allen, John Williams Palmour | 2003-06-24 |
| 6486502 | Nitride based transistors on semi-insulating silicon carbide substrates | Scott Allen, John Williams Palmour | 2002-11-26 |
| 6429459 | Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same | Wolfgang Wondrak, Vera Lauer, Nando Kaminski, Raban Held, Gerhard Pensl | 2002-08-06 |
| 6316793 | Nitride based transistors on semi-insulating silicon carbide substrates | Scott Allen, John Williams Palmour | 2001-11-13 |