Issued Patents All Time
Showing 26–50 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6773998 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Philip A. Fisher, Chih-Yuh Yang, Christopher F. Lyons, Scott A. Bell, Douglas J. Bonser +2 more | 2004-08-10 |
| 6764949 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Douglas J. Bonser, Chih-Yuh Yang, Scott A. Bell, Darin A. Chan, Philip A. Fisher +6 more | 2004-07-20 |
| 6764947 | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices | Darin A. Chan, Douglas J. Bonser, Marilyn I. Wright, Chih-Yuh Yang, Lu You +2 more | 2004-07-20 |
| 6753266 | Method of enhancing gate patterning properties with reflective hard mask | Todd P. Lukanc, Scott A. Bell, Christopher F. Lyons, Ramkumar Subramanian | 2004-06-22 |
| 6737222 | Dual damascene process utilizing a bi-layer imaging layer | Ramkumar Subramanian, Christopher F. Lyons, Scott A. Bell | 2004-05-18 |
| 6689682 | Multilayer anti-reflective coating for semiconductor lithography | Robert B. Ogle, Tuan Pham | 2004-02-10 |
| 6689541 | Process for forming a photoresist mask | Scott A. Bell, Todd P. Lukanc, Christopher F. Lyons, Ramkumar Subramanian | 2004-02-10 |
| 6660645 | Process for etching an organic dielectric using a silyated photoresist mask | Scott A. Bell, Todd P. Lukanc, Christopher F. Lyons, Ramkumar Subramanian | 2003-12-09 |
| 6635409 | Method of strengthening photoresist to prevent pattern collapse | Christopher F. Lyons, Scott A. Bell, Todd P. Lukanc | 2003-10-21 |
| 6606738 | Analytical model for predicting the operating process window for lithographic patterning techniques based on photoresist trim technology | Scott A. Bell, Amada Wilkison, Chih-Yuh Yang | 2003-08-12 |
| 6605546 | Dual bake for BARC fill without voids | Ramkumar Subramanian, Wolfram Grundke, Bhanwar Singh, Christopher F. Lyons | 2003-08-12 |
| 6589711 | Dual inlaid process using a bilayer resist | Ramkumar Subramanian, Christopher F. Lyons, Bhanwar Singh | 2003-07-08 |
| 6586339 | Silicon barrier layer to prevent resist poisoning | Robert B. Ogle, Lewis Shen | 2003-07-01 |
| 6566214 | Method of making a semiconductor device by annealing a metal layer to form metal silicide and using the metal silicide as a hard mask to pattern a polysilicon layer | Christopher F. Lyons, Ramkumar Subramanian, Scott A. Bell, Todd P. Lukanc | 2003-05-20 |
| 6563221 | Connection structures for integrated circuits and processes for their formation | Scott A. Bell, Todd P. Lukanc, Christopher F. Lyons, Ramkumar Subramanian | 2003-05-13 |
| 6558965 | Measuring BARC thickness using scatterometry | Bhanwar Singh, Ramkumar Subramanian, Christopher F. Lyons | 2003-05-06 |
| 6548423 | Multilayer anti-reflective coating process for integrated circuit fabrication | Christopher F. Lyons, Scott A. Bell, Todd P. Lukanc | 2003-04-15 |
| 6541360 | Bi-layer trim etch process to form integrated circuit gate structures | Scott A. Bell, Christopher F. Lyons, Ramkumar Subramanian, Bhanwar Singh | 2003-04-01 |
| 6534418 | Use of silicon containing imaging layer to define sub-resolution gate structures | Scott A. Bell, Christopher F. Lyons, Ramkumar Subramanian, Bhanwar Singh | 2003-03-18 |
| 6458691 | Dual inlaid process using an imaging layer to protect via from poisoning | Ramkumar Subramanian, Christopher F. Lyons, Bhanwar Singh | 2002-10-01 |
| 6458606 | Etch bias distribution across semiconductor wafer | Luigi Capodieci, Scott A. Bell, Todd P. Lukanc | 2002-10-01 |
| 6448164 | Dark field image reversal for gate or line patterning | Christopher F. Lyons, Ramkumar Subramanian, Todd P. Lukanc | 2002-09-10 |
| 6423650 | Ultra-thin resist coating quality by increasing surface roughness of the substrate | Christopher F. Lyons, Michael K. Templeton, Bhanwar Singh | 2002-07-23 |
| 6420280 | Method and system for reducing ARC layer removal by providing a capping layer for the ARC layer | — | 2002-07-16 |
| 6417084 | T-gate formation using a modified conventional poly process | Bhanwar Singh, Ramkumar Subramanian, Christopher F. Lyons | 2002-07-09 |