Issued Patents 2023
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11749733 | FIN shaping using templates and integrated circuit structures resulting therefrom | Leonard P. GULER, Biswajeet Guha, Mark Armstrong, William Hsu, Swaminathan Sivakumar | 2023-09-05 |
| 11742429 | Thin-film transistors with low contact resistance | Abhishek A. Sharma, Van H. Le, Li Huey Tan, Tristan A. Tronic, Benjamin Chu-Kung +1 more | 2023-08-29 |
| 11742410 | Gate-all-around integrated circuit structures having oxide sub-fins | Leonard P. GULER, Biswajeet Guha, Swaminathan Sivakumar | 2023-08-29 |
| 11735630 | Integrated circuit structures with source or drain dopant diffusion blocking layers | Cory Bomberger, Anand S. Murthy, Anupama Bowonder, Aaron A. Budrevich | 2023-08-22 |
| 11735670 | Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Jack T. Kavalieros +3 more | 2023-08-22 |
| 11721735 | Thin film transistors having U-shaped features | Gilbert Dewey, Aaron D. Lilak, Van H. Le, Abhishek A. Sharma, Willy Rachmady +6 more | 2023-08-08 |
| 11715775 | Self-aligned gate endcap (SAGE) architectures with gate-all-around devices having epitaxial source or drain structures | Leonard P. GULER, Biswajeet Guha, Swaminathan Sivakumar | 2023-08-01 |
| 11715787 | Self-aligned nanowire | Mark Armstrong, Biswajeet Guha, Jun Sung Kang, Bruce Beattie | 2023-08-01 |
| 11705518 | Isolation schemes for gate-all-around transistor devices | Rishabh Mehandru, Stephen M. Cea, Biswajeet Guha, William Hsu | 2023-07-18 |
| 11699756 | Source/drain diffusion barrier for germanium nMOS transistors | Glenn A. Glass, Anand S. Murthy, Karthik Jambunathan, Cory Bomberger, Jack T. Kavalieros +3 more | 2023-07-11 |
| 11695081 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Sean T. Ma, Nicholas G. Minutillo, Cheng-Ying Huang, Jack T. Kavalieros, Anand S. Murthy +4 more | 2023-07-04 |
| 11688780 | Deep source and drain for transistor structures with back-side contact metallization | Rishabh Mehandru, Stephen M. Cea | 2023-06-27 |
| 11690215 | Self-aligned bitline and capacitor via formation | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Yih Wang, Benjamin Chu-Kung +1 more | 2023-06-27 |
| 11690211 | Thin film transistor based memory cells on both sides of a layer of logic devices | Wilfred Gomes, Mauro J. Kobrinsky, Conor P. Puls, Kevin J. Fischer, Bernhard Sell +1 more | 2023-06-27 |
| 11682731 | Fin smoothing and integrated circuit structures resulting therefrom | Cory Bomberger, Anand S. Murthy, Anupama Bowonder | 2023-06-20 |
| 11683929 | Method for making memory cells based on thin-film transistors | Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +3 more | 2023-06-20 |
| 11676965 | Strained tunable nanowire structures and process | Stephen M. Cea, Anand S. Murthy, Biswajeet Guha | 2023-06-13 |
| 11670682 | FINFET transistor having a doped sub fin structure to reduce channel to substrate leakage | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Anand S. Murthy, Chandra S. Mohapatra +2 more | 2023-06-06 |
| 11658222 | Thin film transistor with charge trap layer | Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Gilbert Dewey, Shriram Shivaraman +2 more | 2023-05-23 |
| 11652047 | Intermediate separation layers at the back-end-of-line | Travis W. Lajoie, Abhishek A. Sharma, Van H. Le, Chieh-Jen Ku, Pei-Hua Wang +13 more | 2023-05-16 |
| 11646359 | Fin cut and fin trim isolation for advanced integrated circuit structure fabrication | Byron Ho, Curtis W. Ward, Michael L. Hattendorf, Christopher P. Auth | 2023-05-09 |
| 11640985 | Trench isolation for advanced integrated circuit structure fabrication | Michael L. Hattendorf, Curtis W. Ward, Heidi M. Meyer, Christopher P. Auth | 2023-05-02 |
| 11640988 | Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions | Szuya S. Liao, Michael L. Hattendorf | 2023-05-02 |
| 11637185 | Contact stacks to reduce hydrogen in semiconductor devices | Justin R. Weber, Harold W. Kennel, Abhishek A. Sharma, Christopher J. Jezewski, Matthew V. Metz +4 more | 2023-04-25 |
| 11631737 | Ingaas epi structure and wet etch process for enabling III-v GAA in art trench | Sanaz K. Gardner, Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros +4 more | 2023-04-18 |