Issued Patents 2019
Showing 26–50 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10361210 | Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices | Veeraraghavan S. Basker, Dechao Guo, Zuoguang Liu, Chun-Chen Yeh | 2019-07-23 |
| 10361315 | Method and apparatus of fabricating source and drain epitaxy for vertical field effect transistor | Chun-Chen Yeh, Kangguo Cheng, Ruilong Xie, Cheng Chi, Chen Zhang | 2019-07-23 |
| 10354960 | Support for long channel length nanowire transistors | Karthik Balakrishnan, Isaac Lauer, Jeffrey W. Sleight | 2019-07-16 |
| 10347739 | Extended contact area using undercut silicide extensions | Effendi Leobandung, Soon-Cheon Seo, Chun-Chen Yeh | 2019-07-09 |
| 10347765 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Veeraraghavan S. Basker, Zuoguang Liu, Xin Miao | 2019-07-09 |
| 10347719 | Nanosheet transistors on bulk material | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2019-07-09 |
| 10340364 | H-shaped VFET with increased current drivability | Chen Zhang, Kangguo Cheng, Xin Miao, Wenyu Xu | 2019-07-02 |
| 10340340 | Multiple-threshold nanosheet transistors | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison +1 more | 2019-07-02 |
| 10332961 | Inner spacer for nanosheet transistors | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2019-06-25 |
| 10332971 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2019-06-25 |
| 10332959 | Bulk to silicon on insulator device | Terence B. Hook, Joshua M. Rubin | 2019-06-25 |
| 10319811 | Semiconductor device including fin having condensed channel region | Hong He, Effendi Leobandung, Gen Tsutsui | 2019-06-11 |
| 10319722 | Contact formation in semiconductor devices | Oleg Gluschenkov, Zuoguang Liu, Hiroaki Niimi, Joseph S. Washington | 2019-06-11 |
| 10319731 | Integrated circuit structure having VFET and embedded memory structure and method of forming same | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-06-11 |
| 10319835 | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors | Su Chen Fan, Zuoguang Liu, Heng Wu | 2019-06-11 |
| 10319840 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2019-06-11 |
| 10312377 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Shogo Mochizuki, Chun-Chen Yeh | 2019-06-04 |
| 10297513 | Stacked vertical NFET and PFET | Chen Zhang | 2019-05-21 |
| 10297507 | Self-aligned vertical field-effect transistor with epitaxially grown bottom and top source drain regions | Kangguo Cheng, Shogo Mochizuki, Chen Zhang | 2019-05-21 |
| 10297452 | Methods of forming a gate contact structure for a transistor | Ruilong Xie, Hui Zang, Kangguo Cheng, Chun-Chen Yeh | 2019-05-21 |
| 10283423 | Test structure macro for monitoring dimensions of deep trench isolation regions and local trench isolation regions | Chun-Chen Yeh, Hui Zang | 2019-05-07 |
| 10276659 | Air gap adjacent a bottom source/drain region of vertical transistor device | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-04-30 |
| 10269920 | Nanosheet transistors having thin and thick gate dielectric material | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2019-04-23 |
| 10269983 | Stacked nanosheet field-effect transistor with air gap spacers | Julien Frougier, Ruilong Xie, Hui Zang, Kangguo Cheng, Chun-Chen Yeh | 2019-04-23 |
| 10256231 | Forming vertical transistors and metal-insulator-metal capacitors on the same chip | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2019-04-09 |