Issued Patents 2019
Showing 51–75 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10249538 | Method of forming vertical field effect transistors with different gate lengths and a resulting structure | Yi Qi, Hsien-Ching Lo, Jianwei Peng, Wei Hong, Yanping Shen +5 more | 2019-04-02 |
| 10249502 | Low resistance source drain contact formation with trench metastable alloys and laser annealing | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Chun-Chen Yeh | 2019-04-02 |
| 10243042 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Xin Miao | 2019-03-26 |
| 10236363 | Vertical field-effect transistors with controlled dimensions | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-03-19 |
| 10229915 | Mirror contact capacitor | Terence B. Hook, Joshua M. Rubin | 2019-03-12 |
| 10229987 | Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins | Kangguo Cheng, Zuoguang Liu, Ruilong Xie | 2019-03-12 |
| 10229982 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta | 2019-03-12 |
| 10229905 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Theodorus E. Standaert | 2019-03-12 |
| 10224207 | Forming a contact for a tall fin transistor | Kangguo Cheng, Ruilong Xie | 2019-03-05 |
| 10224420 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2019-03-05 |
| 10224417 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2019-03-05 |
| 10217672 | Vertical transistor devices with different effective gate lengths | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-02-26 |
| 10211207 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla | 2019-02-19 |
| 10211225 | FinFET devices wit multiple channel lengths | Effendi Leobandung | 2019-02-19 |
| 10211094 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Hiroaki Niimi, Shariq Siddiqui | 2019-02-19 |
| 10199480 | Controlling self-aligned gate length in vertical transistor replacement gate flow | Ruilong Xie, Kangguo Cheng, Chun-Chen Yeh | 2019-02-05 |
| 10199464 | Techniques for VFET top source/drain epitaxy | Kangguo Cheng, Cheng Chi, Chi-Chun Liu, Ruilong Xie, Chun-Chen Yeh | 2019-02-05 |
| 10177237 | Etch stop for airgap protection | Kangguo Cheng, Ruilong Xie | 2019-01-08 |
| 10177223 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Xin Miao | 2019-01-08 |
| 10170551 | Sidewall image transfer nanosheet | Effendi Leobandung | 2019-01-01 |
| 10170594 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2019-01-01 |
| 10170588 | Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity | Chun Wing Yeung, Chen Zhang | 2019-01-01 |
| 10170583 | Forming a gate contact in the active area | Kangguo Cheng, Ruilong Xie | 2019-01-01 |
| 10170582 | Uniform bottom spacer for vertical field effect transistor | Michael P. Belyansky, Cheng Chi, Ekmini Anuja De Silva | 2019-01-01 |
| 10170574 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Hiroaki Niimi, Shariq Siddiqui | 2019-01-01 |