RP

Ravi Pillarisetty

IN Intel: 39 patents #6 of 5,604Top 1%
📍 Portland, OR: #2 of 1,767 inventorsTop 1%
🗺 Oregon: #3 of 4,319 inventorsTop 1%
Overall (2017): #322 of 506,227Top 1%
39
Patents 2017

Issued Patents 2017

Showing 26–39 of 39 patents

Patent #TitleCo-InventorsDate
9640422 III-N devices in Si trenches Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more 2017-05-02
9640671 Deep gate-all-around semiconductor device having germanium or group III-V active layer Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more 2017-05-02
9640646 Semiconductor device having group III-V material active region and graded gate dielectric Gilbert Dewey, Marko Radosavljevic, Matthew V. Metz 2017-05-02
9640537 Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more 2017-05-02
9634007 Trench confined epitaxially grown device layer(s) Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta, Van H. Le +7 more 2017-04-25
9627384 Transistors with high concentration of boron doped germanium Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Niloy Mukherjee, Jack T. Kavalieros +3 more 2017-04-18
9614093 Strain compensation in transistors Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Jack T. Kavalieros 2017-04-04
9608055 Semiconductor device having germanium active layer with underlying diffusion barrier layer Willy Rachmady, Van H. Le, Jack T. Kavalieros, Robert S. Chau, Harold W. Kennel 2017-03-28
9590089 Variable gate width for gate all-around transistors Willy Rachmady, Van H. Le, Jack T. Kavalieros, Robert S. Chau, Seung Hoon Sung 2017-03-07
9590069 Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more 2017-03-07
9583396 Making a defect free fin based device in lateral epitaxy overgrowth region Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz +3 more 2017-02-28
9577190 Thermal management structure for low-power nonvolatile filamentary switch Elijah V. Karpov, Prashant Majhi, Niloy Mukherjee, Uday Shah, Brian S. Doyle +1 more 2017-02-21
9570614 Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more 2017-02-14
9564490 Apparatus and methods for forming a modulation doped non-planar transistor Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros 2017-02-07