Issued Patents 2017
Showing 1–25 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853022 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-12-26 |
| 9812567 | Precise control of vertical transistor gate length | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-11-07 |
| 9805987 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-10-31 |
| 9793175 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-10-17 |
| 9786563 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-10-10 |
| 9780035 | Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects | Benjamin D. Briggs, James J. Kelly, Koichi Motoyama, Roger A. Quon, Michael Rizzolo | 2017-10-03 |
| 9780091 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-10-03 |
| 9761500 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-09-12 |
| 9761496 | Field effect transistor contacts | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-09-12 |
| 9735246 | Air-gap top spacer and self-aligned metal gate for vertical fets | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-08-15 |
| 9721893 | Self-forming barrier for subtractive copper | Vamsi K. Paruchuri | 2017-08-01 |
| 9716042 | Fin field-effect transistor (FinFET) with reduced parasitic capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-07-25 |
| 9704848 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Tenko Yamashita | 2017-07-11 |
| 9698215 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-07-04 |
| 9698212 | Three-dimensional metal resistor formation | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-07-04 |
| 9691877 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-06-27 |
| 9691659 | Via and chamfer control for advanced interconnects | Yann Mignot, Chih-Chao Yang | 2017-06-27 |
| 9685532 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-06-20 |
| 9685507 | FinFET devices | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-06-20 |
| 9666529 | Method and structure to reduce the electric field in semiconductor wiring interconnects | Elbert E. Huang, Takeshi Nogami, Raghuveer R. Patlolla, Christopher J. Penny | 2017-05-30 |
| 9666533 | Airgap formation between source/drain contacts and gates | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-05-30 |
| 9653456 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-05-16 |
| 9653575 | Vertical transistor with a body contact for back-biasing | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-05-16 |
| 9634005 | Gate planarity for FinFET using dummy polish stop | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2017-04-25 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz, Ruilong Xie | 2017-04-25 |