Issued Patents 2017
Showing 51–75 of 124 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9666493 | Semiconductor device structure with 110-PFET and 111-NFET curent flow direction | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2017-05-30 |
| 9666615 | Semiconductor on insulator substrate with back bias | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-05-30 |
| 9666267 | Structure and method for adjusting threshold voltage of the array of transistors | Jin Cai, Kangguo Cheng, Robert H. Dennard, Tak H. Ning | 2017-05-30 |
| 9659931 | Fin cut on sit level | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2017-05-23 |
| 9660059 | Fin replacement in a field-effect transistor | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek, Dominic J. Schepis | 2017-05-23 |
| 9660050 | Replacement low-k spacer | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2017-05-23 |
| 9659964 | Method and structure for preventing epi merging in embedded dynamic random access memory | Veeraraghavan S. Basker, Kangguo Cheng | 2017-05-23 |
| 9659963 | Contact formation to 3D monolithic stacked FinFETs | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-05-23 |
| 9659942 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Veeraraghavan S. Basker, Kangguo Cheng | 2017-05-23 |
| 9653285 | Double aspect ratio trapping | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2017-05-16 |
| 9653541 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2017-05-16 |
| 9647113 | Strained FinFET by epitaxial stressor independent of gate pitch | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek, Charan V. Surisetty | 2017-05-09 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Johnathan E. Faltermeier, Theodorus E. Standaert, Ruilong Xie | 2017-04-25 |
| 9634027 | CMOS structure on SSOI wafer | Bruce B. Doris, Hong He, Junli Wang | 2017-04-25 |
| 9634004 | Forming reliable contacts on tight semiconductor pitch | Xiuyu Cai, Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2017-04-25 |
| 9633943 | Method and structure for forming on-chip anti-fuse with reduced breakdown voltage | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-04-25 |
| 9633911 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Kangguo Cheng, Bruce B. Doris, Qing Liu, Nicolas Loubet, Scott Luning | 2017-04-25 |
| 9633908 | Method for forming a semiconductor structure containing high mobility semiconductor channel materials | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-04-25 |
| 9627278 | Method of source/drain height control in dual epi finFET formation | Veeraraghavan S. Basker, Kangguo Cheng | 2017-04-18 |
| 9627491 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-04-18 |
| 9627377 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Shom Ponoth, Theodorus E. Standaert +4 more | 2017-04-18 |
| 9627270 | Dual work function integration for stacked FinFET | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-04-18 |
| 9620641 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Alexander Reznicek, Soon-Cheon Seo | 2017-04-11 |
| 9613954 | Selective removal of semiconductor fins | Veeraraghavan S. Basker, Kangguo Cheng | 2017-04-04 |
| 9607990 | Method to form strained nFET and strained pFET nanowires on a same substrate | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-03-28 |