Issued Patents 2017
Showing 26–50 of 124 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9746442 | Switched-capacitor biosensor device | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-08-29 |
| 9748365 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-08-29 |
| 9741722 | Dummy gate structure for electrical isolation of a fin DRAM | John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Babar A. Khan +4 more | 2017-08-22 |
| 9741672 | Preventing unauthorized use of integrated circuits for radiation-hard applications | Kangguo Cheng, Bruce B. Doris, Kenneth P. Rodbell | 2017-08-22 |
| 9735272 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2017-08-15 |
| 9735162 | Dynamic random access memory cell with self-aligned strap | John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ravikumar Ramachandran, Kern Rim +1 more | 2017-08-15 |
| 9735257 | finFET having highly doped source and drain regions | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2017-08-15 |
| 9733210 | Nanofluid sensor with real-time spatial sensing | Kangguo Cheng, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-08-15 |
| 9735160 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-08-15 |
| 9728625 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Yunpeng Yin | 2017-08-08 |
| 9728649 | Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2017-08-08 |
| 9721885 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2017-08-01 |
| 9721851 | Silicon-germanium fin formation | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2017-08-01 |
| 9716064 | Electrical fuse and/or resistor structures | Veeraraghavan S. Basker, Kangguo Cheng, Juntao Li | 2017-07-25 |
| 9716201 | Silicon heterojunction photovoltaic device with wide band gap emitter | Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-07-25 |
| 9704993 | Method of preventing epitaxy creeping under the spacer | Veeraraghavan S. Basker, Kangguo Cheng, Sreenivasan Raghavasimhan | 2017-07-11 |
| 9698046 | Fabrication of III-V-on-insulator platforms for semiconductor devices | Anirban Basu, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2017-07-04 |
| 9691900 | Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch | Kangguo Cheng, Richard S. Wise | 2017-06-27 |
| 9685434 | Inter-level dielectric layer in replacement metal gates and resistor fabrication | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2017-06-20 |
| 9680015 | Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch | Kangguo Cheng, Richard S. Wise | 2017-06-13 |
| 9680045 | III-V solar cell structure with multi-layer back surface field | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-06-13 |
| 9673196 | Field effect transistors with varying threshold voltages | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2017-06-06 |
| 9673296 | Semiconductor structure having a source and a drain with reverse facets | Thomas N. Adam, Kangguo Cheng, Jinghong Li, Alexander Reznicek | 2017-06-06 |
| 9673190 | ESD device compatible with bulk bias capability | Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Pranita Kerber, Balasubramanian Pranatharthiharan +1 more | 2017-06-06 |
| 9673083 | Methods of forming fin isolation regions on FinFET semiconductor devices by implantation of an oxidation-retarding material | Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Kern Rim | 2017-06-06 |