Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8252192 | Method of pattern etching a dielectric film while removing a mask layer | Yao-Sheng Lee, Masaru Nishino, Kelvin Zin | 2012-08-28 |
| 8048325 | Method and apparatus for multilayer photoresist dry development | Koichiro Inazawa, Rie Inazawa, Rich Wise, Arpan Mahorawala, Siddhartha Panda | 2011-11-01 |
| 7998872 | Method for etching a silicon-containing ARC layer to reduce roughness and CD | Vinh Luong, Masaru Nishino | 2011-08-16 |
| 7767926 | Method and system for dry development of a multi-layer mask using sidewall passivation and mask passivation | — | 2010-08-03 |
| 7759249 | Method of removing residue from a substrate | — | 2010-07-20 |
| 7700494 | Low-pressure removal of photoresist and etch residue | Masaaki Hagihara, Eiichi Nishimura, Koichiro Inazawa | 2010-04-20 |
| 7595005 | Method and apparatus for ashing a substrate using carbon dioxide | — | 2009-09-29 |
| 7465673 | Method and apparatus for bilayer photoresist dry development | Yoshiki Igarashi, Kouichiro Inazawa, Kimihiro Higuchi, Eiichi Nishimura, Ralph Kim +2 more | 2008-12-16 |
| 7344991 | Method and apparatus for multilayer photoresist dry development | Koichiro Inazawa, Rich Wise, Arpan Mahorowala, Siddhartha Panda | 2008-03-18 |
| 7344993 | Low-pressure removal of photoresist and etch residue | Yasunori Hatamura, Masaaki Hagihara, Eiichi Nishimura, Koichiro Inazawa | 2008-03-18 |
| 7169440 | Method for removing photoresist and etch residues | Masaaki Hagiwara, Eiichi Nishimura, Kouichiro Inazawa | 2007-01-30 |
| 6849559 | Method for removing photoresist and etch residues | Yasunori Hatamura, Masaaki Hagiwara, Eiichi Nishimura, Kouichiro Inazawa | 2005-02-01 |
| 6670276 | Plasma processing method | Tomoki Suemasa, Koichiro Inazawa | 2003-12-30 |