Issued Patents All Time
Showing 26–50 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7394125 | Recessed channel with separated ONO memory device | Jaeyong Park, Satoshi Torii, Mark T. Ramsbey | 2008-07-01 |
| 7381620 | Oxygen elimination for device processing | Boon Yong Ang, Simon S. Chan, Harpreet Sachar, Mark Randolph | 2008-06-03 |
| 7365389 | Memory cell having enhanced high-K dielectric | Joong S. Jeon, Wei Zheng, Mark Randolph, Meng Ding | 2008-04-29 |
| 7339222 | Method for determining wordline critical dimension in a memory array and related structure | Meng Ding, Mark Randolph | 2008-03-04 |
| 7321511 | Semiconductor device and method for controlling operation thereof | Masaru Yano, Hideki Arakawa | 2008-01-22 |
| 7303964 | Self-aligned STI SONOS | Mark Randolph, Yu Sun | 2007-12-04 |
| 7297592 | Semiconductor memory with data retention liner | Minh Van Ngo, Arvind Halliyal, Tazrien Kamal, Rinji Sugino, Dawn Hopper +1 more | 2007-11-20 |
| 7232724 | Radical oxidation for bitline oxide of SONOS | Joong S. Jeon, Weidong Qian | 2007-06-19 |
| 7196008 | Aluminum oxide as liner or cover layer to spacers in memory device | Satoshi Torii, Jaeyong Park, Joong S. Jeon | 2007-03-27 |
| 7163860 | Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device | Tazrien Kamal, Yun Wu, Mark T. Ramsbey, Jean Y. Yang, Arvind Halliyal +2 more | 2007-01-16 |
| 7151293 | SONOS memory with inversion bit-lines | Jaeyong Park, Satoshi Torii, Hideki Arakawa, Masaru Yano | 2006-12-19 |
| 7115469 | Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) process | Arvind Halliyal, Mark T. Ramsbey, Jean Y. Yang | 2006-10-03 |
| 7098546 | Alignment marks with salicided spacers between bitlines for alignment signal improvement | Emmanuil H. Lingunis, Jean Y. Yang | 2006-08-29 |
| 7074677 | Memory with improved charge-trapping dielectric layer | Arvind Halliyal, Minh Van Ngo, Rinji Sugino | 2006-07-11 |
| 7071538 | One stack with steam oxide for charge retention | Harpreet Sachar, Mark Randolph, Wei Zheng | 2006-07-04 |
| 7067377 | Recessed channel with separated ONO memory device | Jaeyong Park, Satoshi Torii, Mark T. Ramsbey | 2006-06-27 |
| 7052961 | Method for forming wordlines having irregular spacing in a memory array | Jean Y. Yang, Jaeyong Park, Cyrus E. Tabery | 2006-05-30 |
| 7033957 | ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices | Tazrien Kamal, Mark T. Ramsbey, Inkuk Kang, Jaeyong Park, Rinji Sugino +4 more | 2006-04-25 |
| 6969886 | ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices | Jaeyong Park, Arvind Halliyal, Jean Y. Yang, Inkuk Kang, Tazrien Kamal +1 more | 2005-11-29 |
| 6958511 | Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen | Arvind Halliyal, Amir H. Jafarpour, Tazrien Kamal, Mark T. Ramsbey, Jaeyong Park | 2005-10-25 |
| 6955965 | Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor device | Arvind Halliyal, Tazrien Kamal, Jean Y. Yang | 2005-10-18 |
| 6949481 | Process for fabrication of spacer layer with reduced hydrogen content in semiconductor device | Arvind Halliyal, Fred Cheung, Rinji Sugino, Tazrien Kamal, Jean Y. Yang | 2005-09-27 |
| 6912163 | Memory device having high work function gate and method of erasing same | Wei Zheng, Yun Wu, Mark T. Ramsbey, Tazrien Kamal | 2005-06-28 |
| 6894342 | Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control | Angela T. Hui, Minh Van Ngo, Ning Cheng, Jaeyong Park, Jean Y. Yang +2 more | 2005-05-17 |
| 6884681 | Method of manufacturing a semiconductor memory with deuterated materials | Tazrien Kamal, Arvind Halliyal, Minh Van Ngo, Mark T. Ramsbey, Jean Y. Yang +1 more | 2005-04-26 |