Issued Patents All Time
Showing 25 most recent of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10032901 | Semiconductor device with trench-like feed-throughs | Deva Pattanayak, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo-In Chen +5 more | 2018-07-24 |
| 9306056 | Semiconductor device with trench-like feed-throughs | Deva Pattanayak, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo-In Chen +5 more | 2016-04-05 |
| 9093359 | Complete power management system implemented in a single surface mount package | Mohammed Kasem, Yuming Bai, Frank Kuo, Sen Mao, Sam Kuo | 2015-07-28 |
| 9040356 | Semiconductor including cup-shaped leadframe packaging techniques | Mike F. Chang, Yueh-Se Ho, Mohammed Kasem, Lixiong Luo, Wei-Bing Chu | 2015-05-26 |
| 8928138 | Complete power management system implemented in a single surface mount package | Mohammed Kasem, Yuming Bai, Frank Kuo, Sen Mao, Sam Kuo | 2015-01-06 |
| 8471381 | Complete power management system implemented in a single surface mount package | Mohammed Kasem, Yuming Bai, Frank Kuo, Sen Mao, Sam Kuo | 2013-06-25 |
| 8269263 | High current density power field effect transistor | Jian Li | 2012-09-18 |
| 7595547 | Semiconductor die package including cup-shaped leadframe | Mike F. Chang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu | 2009-09-29 |
| 7394150 | Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys | Mohammed Kasem, Frank Kuo, Serge Jaunay, Sen Mao, Oscar Ou +2 more | 2008-07-01 |
| 7326995 | Trench MIS device having implanted drain-drift region and thick bottom oxide | Mohamed N. Darwish | 2008-02-05 |
| 7238551 | Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys | Mohammed Kasem, Frank Kuo, Serge Jaunay, Sen Mao, Oscar Ou +2 more | 2007-07-03 |
| 7033876 | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same | Mohamed N. Darwish | 2006-04-25 |
| 6909170 | Semiconductor assembly with package using cup-shaped lead-frame | Mike F. Chang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu | 2005-06-21 |
| 6744124 | Semiconductor die package including cup-shaped leadframe | Mike F. Chang, Yueh-Se Ho, Y. Mohammed Kasem, Lixiong Luo, Wei-Bing Chu | 2004-06-01 |
| 5910669 | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof | Mike F. Chang, Fwu-Iuan Hshieh, Sze-Hon Kwan | 1999-06-08 |
| 5767578 | Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation | Mike F. Chang, Fwu-Iuan Hshieh, Yueh-Se Ho, Jowei Dun, Hans-Jurgen Fusser +1 more | 1998-06-16 |
| 5757081 | Surface mount and flip chip technology for total integrated circuit isolation | Mike F. Chang, Fwu-Iuan Hshieh, Yueh-Se Ho, Jowei Dun | 1998-05-26 |
| 5753529 | Surface mount and flip chip technology for total integrated circuit isolation | Mike F. Chang, Fwu-Iuan Hshieh, Yueh-Se Ho, Jowei Dun | 1998-05-19 |
| 5639676 | Trenched DMOS transistor fabrication having thick termination region oxide | Fwu-Iuan Hshieh, Mike F. Chang, Yueh-Se Ho | 1997-06-17 |
| 5578851 | Trenched DMOS transistor having thick field oxide in termination region | Fwu-Iuan Hshieh, Mike F. Chang, Yueh-Se Ho | 1996-11-26 |
| 5532179 | Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof | Mike F. Chang, Fwu-Iuan Hshieh, Sze-Hon Kwan | 1996-07-02 |
| 5521409 | Structure of power mosfets, including termination structures | Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, Dorman C. Pitzer, Jan Van Der Linde | 1996-05-28 |
| 5517379 | Reverse battery protection device containing power MOSFET | Richard K. Williams, Thomas N. Toombs, Hamza Yilmaz | 1996-05-14 |
| 5468982 | Trenched DMOS transistor with channel block at cell trench corners | Fwu-Iuan Hshieh, Sze-Hon Kwan, Mike F. Chang, Yueh-Se Ho, Jan Van Der Linde | 1995-11-21 |
| 5429964 | Low on-resistance power MOS technology | Hamza Yilmaz, Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, Dorman C. Pitzer +1 more | 1995-07-04 |