Issued Patents All Time
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5910669 | Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof | Mike F. Chang, Fwu-Iuan Hshieh, King Owyang | 1999-06-08 |
| 5879994 | Self-aligned method of fabricating terrace gate DMOS transistor | Izak Bencuya, Steven Sapp | 1999-03-09 |
| 5665619 | Method of fabricating a self-aligned contact trench DMOS transistor structure | Izak Bencuya | 1997-09-09 |
| 5567634 | Method of fabricating self-aligned contact trench DMOS transistors | Francois Hebert, Izak Bencuya | 1996-10-22 |
| 5532179 | Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof | Mike F. Chang, Fwu-Iuan Hshieh, King Owyang | 1996-07-02 |
| 5468982 | Trenched DMOS transistor with channel block at cell trench corners | Fwu-Iuan Hshieh, Mike F. Chang, Yueh-Se Ho, Jan Van Der Linde, King Owyang | 1995-11-21 |
| 5316959 | Trenched DMOS transistor fabrication using six masks | Fwu-Iuan Hshieh, Mike F. Chang, Yueh-Se Ho, King Owyang | 1994-05-31 |