| 5750416 |
Method of forming a lateral field effect transistor having reduced drain-to-source on-resistance |
Fwu-Iuan Hshieh, Mike F. Chang, Yueh-Se Ho |
1998-05-12 |
| 5521409 |
Structure of power mosfets, including termination structures |
Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, King Owyang, Dorman C. Pitzer |
1996-05-28 |
| 5468982 |
Trenched DMOS transistor with channel block at cell trench corners |
Fwu-Iuan Hshieh, Sze-Hon Kwan, Mike F. Chang, Yueh-Se Ho, King Owyang |
1995-11-21 |
| 5429964 |
Low on-resistance power MOS technology |
Hamza Yilmaz, Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, King Owyang +1 more |
1995-07-04 |
| 5304831 |
Low on-resistance power MOS technology |
Hamza Yilmaz, Fwu-Iuan Hshieh, Mike F. Chang, Jun-Wei Chen, King Owyang +1 more |
1994-04-19 |