Issued Patents All Time
Showing 26–50 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11676954 | Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the same | Peter Rabkin, Kwang Ho Kim | 2023-06-13 |
| 11646282 | Bonded semiconductor die assembly with metal alloy bonding pads and methods of forming the same | Lin Hou, Peter Rabkin | 2023-05-09 |
| 11646283 | Bonded assembly containing low dielectric constant bonding dielectric material | Lin Hou, Peter Rabkin, Ramy Nashed Bassely Said | 2023-05-09 |
| 11598005 | Deposition apparatus including an off-axis lift-and-rotation unit and methods for operating the same | Shoichi Murakami, Shigeru NAKATSUKA, Syo Fukata, Yusuke OSAWA, Shigehiro Fujino | 2023-03-07 |
| 11569259 | Three-dimensional memory device with double-sided stepped surfaces and method of making thereof | Yuki Mizutani | 2023-01-31 |
| 11562975 | Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the same | Lin Hou, Peter Rabkin | 2023-01-24 |
| 11551961 | Multi-zone plasma-enhanced chemical vapor deposition apparatus and methods for operating the same | Shoichi Murakami, Shigeru NAKATSUKA, Syo Fukata, Yusuke OSAWA, Shigehiro Fujino | 2023-01-10 |
| 11552094 | Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same | James Kai, Murshed Chowdhury, Johann Alsmeier | 2023-01-10 |
| 11538708 | Multi-zone plasma-enhanced chemical vapor deposition apparatus and methods for operating the same | Shoichi Murakami, Shigeru NAKATSUKA, Syo Fukata, Yusuke OSAWA, Shigehiro Fujino | 2022-12-27 |
| 11508654 | Non-volatile memory with capacitors using metal under signal line or above a device capacitor | Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Peter Rabkin | 2022-11-22 |
| 11476272 | Three-dimensional memory device with a graphene channel and methods of making the same | Peter Rabkin | 2022-10-18 |
| 11444016 | Non-volatile memory with capacitors using metal under signal line or above a device capacitor | Luisa Lin, Mohan Dunga, Venkatesh Ramachandra, Peter Rabkin | 2022-09-13 |
| 11430745 | Semiconductor die containing silicon nitride stress compensating regions and method for making the same | Chen Wu, Peter Rabkin, Yangyin Chen | 2022-08-30 |
| 11424215 | Bonded assembly formed by hybrid wafer bonding using selectively deposited metal liners | Lin Hou, Peter Rabkin, Yangyin Chen | 2022-08-23 |
| 11387142 | Semiconductor device containing bit lines separated by air gaps and methods for forming the same | Koichi Matsuno, Johann Alsmeier | 2022-07-12 |
| 11362079 | Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same | Chen Wu, Peter Rabkin | 2022-06-14 |
| 11355486 | Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer | Yuki Mizutani, James Kai | 2022-06-07 |
| 11348901 | Interfacial tilt-resistant bonded assembly and methods for forming the same | Lin Hou, Peter Rabkin, Yangyin Chen | 2022-05-31 |
| 11348649 | Threshold voltage setting with boosting read scheme | Kiyohiko Sakakibara, Hiroki Yabe, Ken Oowada | 2022-05-31 |
| 11335790 | Ferroelectric memory devices with dual dielectric confinement and methods of forming the same | Peter Rabkin | 2022-05-17 |
| 11276705 | Embedded bonded assembly and method for making the same | Chen Wu, Peter Rabkin, Yangyin Chen | 2022-03-15 |
| 11270963 | Bonding pads including interfacial electromigration barrier layers and methods of making the same | Chen Wu, Peter Rabkin | 2022-03-08 |
| 11239204 | Bonded assembly containing laterally bonded bonding pads and methods of forming the same | Chen Wu, Peter Rabkin, Yangyin Chen | 2022-02-01 |
| 11227663 | Boosting read scheme with back-gate bias | Kiyohiko Sakakibara, Ippei Yasuda, Ken Oowada | 2022-01-18 |
| 11177284 | Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the same | Peter Rabkin, Alan Kalitsov | 2021-11-16 |