PG

Paul A. Grudowski

FS Freeescale Semiconductor: 25 patents #70 of 3,767Top 2%
NB Nxp B.V.: 2 patents #1,098 of 3,591Top 35%
Motorola: 1 patents #6,475 of 12,470Top 55%
NU Nxp Usa: 1 patents #1,089 of 2,066Top 55%
Overall (All Time): #130,417 of 4,157,543Top 4%
29
Patents All Time

Issued Patents All Time

Showing 25 most recent of 29 patents

Patent #TitleCo-InventorsDate
11222961 Lateral semiconductor device having raised source and drain, and method of manufacture thererof Viet Thanh Dinh, Guido Sasse 2022-01-11
10580906 Semiconductor device comprising a PN junction diode Viet Thanh Dinh, Marina Vroubel 2020-03-03
9847389 Semiconductor device including an active region and two layers having different stress characteristics Brian A. Winstead, Vance H. Adams 2017-12-19
8980734 Gate security feature Tab A. Stephens, Perry H. Pelley, Michael B. McShane 2015-03-17
8569858 Semiconductor device including an active region and two layers having different stress characteristics Brian A. Winstead, Vance H. Adams 2013-10-29
8021957 Process of forming an electronic device including insulating layers having different strains Venkat R. Kolagunta, Mehul D. Shroff 2011-09-20
7843011 Electronic device including insulating layers having different strains Venkat R. Kolagunta, Mehul D. Shroff 2010-11-30
7745298 Method of forming a via Tab A. Stephens, Olubunmi O. Adetutu, Matthew T. Herrick 2010-06-29
7736957 Method of making a semiconductor device with embedded stressor Veeraraghavan Dhandapani, Darren V. Goedeke, Voon-Yew Thean, Stefan Zollner 2010-06-15
7714318 Electronic device including a transistor structure having an active region adjacent to a stressor layer Vance H. Adams, Venkat R. Kolagunta, Brian A. Winstead 2010-05-11
7700499 Multilayer silicon nitride deposition for a semiconductor device Kurt H. Junker, Xiang-Zheng Bo, Tien Ying Luo 2010-04-20
7687354 Fabrication of a semiconductor device with stressor Veeraraghavan Dhandapani, Stefan Zollner 2010-03-30
7678698 Method of forming a semiconductor device with multiple tensile stressor layers Xiangzheng Bo, Tien Ying Luo, Kurt H. Junker, Venkat R. Kolagunta 2010-03-16
7579228 Disposable organic spacers Kurt H. Junker, Thomas J. Kropewnicki, Andrew G. Nagy 2009-08-25
7538002 Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors Da Zhang, Vance H. Adams, Bich-Yen Nguyen 2009-05-26
7528029 Stressor integration and method thereof Darren V. Goedekc, John J. Hackenberg 2009-05-05
7511360 Semiconductor device having stressors and method for forming Mehul D. Shroff 2009-03-31
7504289 Process for forming an electronic device including transistor structures with sidewall spacers Sangwoo Lim, Stanley L. Filipiak, Venkat R. Kolagunta 2009-03-17
7491630 Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility Mehul D. Shroff, Mark D. Hall, Tab A. Stephens 2009-02-17
7442598 Method of forming an interlayer dielectric Stanley M. Filipiak, Yongloo Jeon, Chad Weintraub 2008-10-28
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Vance H. Adams, Venkat R. Kolagunta, Brian A. Winstead 2008-09-02
7416605 Anneal of epitaxial layer in a semiconductor device Stefan Zollner, Veeraraghavan Dhandapani, Gregory S. Spencer 2008-08-26
7402472 Method of making a nitrided gate dielectric Sangwoo Lim, Tien Ying Luo, Olubunmi O. Adetutu, Hsing-Huang Tseng 2008-07-22
7214590 Method of forming an electronic device Sangwoo Lim, Mohamad Jahanbani, Hsing-Huang Tseng, Choh Fei Yeap 2007-05-08
7132704 Transistor sidewall spacer stress modulation 2006-11-07