MY

Mickey H. Yu

Globalfoundries: 10 patents #365 of 4,424Top 9%
IBM: 5 patents #18,733 of 70,183Top 30%
GU Globalfoundries U.S.: 4 patents #133 of 665Top 20%
TC Toshiba America Electronic Components: 1 patents #23 of 77Top 30%
📍 South Burlington, VT: #123 of 1,136 inventorsTop 15%
🗺 Vermont: #409 of 4,968 inventorsTop 9%
Overall (All Time): #234,459 of 4,157,543Top 6%
19
Patents All Time

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDate
11791626 Electrostatic discharge clamp structures You Li, Alain Loiseau, Souvick Mitra, Tsung-Che Tsai, Robert J. Gauthier, Jr. 2023-10-17
11637173 Structure including polycrystalline resistor with dopant-including polycrystalline region thereunder Yves T. Ngu, Siva P. Adusumilli, Steven M. Shank, Michael J. Zierak 2023-04-25
11444149 Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related method Siva P. Adusumilli, Steven M. Shank, Yves T. Ngu 2022-09-13
11201466 Electrostatic discharge clamp structures You Li, Alain Loiseau, Souvick Mitra, Tsung-Che Tsai, Robert J. Gauthier, Jr. 2021-12-14
10741685 Semiconductor devices having a fin channel arranged between source and drift regions and methods of manufacturing the same Robert J. Gauthier, Jr., Souvick Mitra, Alain Loiseau, Tsai Tsung-Che, You Li 2020-08-11
10692852 Silicon-controlled rectifiers with wells laterally isolated by trench isolation regions Alain Loiseau, You Li, Tsung-Che Tsai, Souvick Mitra, Robert J. Gauthier, Jr. 2020-06-23
10636872 Apparatus and method to prevent integrated circuit from entering latch-up mode Shunhua T. Chang, Ephrem G. Gebreselasie, Mujahid Muhammad, Xiangxiang Lu 2020-04-28
10541236 Electrostatic discharge devices with reduced capacitance Souvick Mitra, Alain Loiseau, You Li, Robert J. Gauthier, Jr., Tsung-Che Tsai 2020-01-21
10361293 Vertical fin-type devices and methods Tsung-Che Tsai, Alain Loiseau, Robert J. Gauthier, Jr., Souvick Mitra, You Li 2019-07-23
10290626 High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the same You Li, Alain Loiseau, Tsung-Che Tsai, Souvick Mitra, Robert J. Gauthier, Jr. 2019-05-14
10096587 Fin-based diode structures with a realigned feature layout Alain Loiseau, Souvick Mitra, Tsung-Che Tsai, You Li, Robert J. Gauthier, Jr. 2018-10-09
10008491 Low capacitance electrostatic discharge (ESD) devices You Li, Robert J. Gauthier, Jr., Souvick Mitra 2018-06-26
9818873 Forming stressed epitaxial layers between gates separated by different pitches Emre Alptekin, Lars Liebmann, Injo Ok, Balasubramanian Pranatharthiharan, Ravikumar Ramachandran +2 more 2017-11-14
9431399 Method for forming merged contact for semiconductor device Emre Alptekin, Balasubramanian Pranatharthiharan, Sivananda K. Kanakasabapathy, Ravikumar Ramachandran 2016-08-30
9312274 Merged fin structures for finFET devices Andres Bryant, Brian J. Greene, Jeffrey B. Johnson 2016-04-12
8536018 Maskless inter-well deep trench isolation structure and methods of manufacture Brent A. Anderson, Andres Bryant, Josephine B. Chang, Michael A. Guillorn, Ryoji Hasumi +1 more 2013-09-17
8028924 Device and method for providing an integrated circuit with a unique identification Brent A. Anderson, Andres Bryant, Alain Loiseau, Anthony K. Stamper 2011-10-04
7723178 Shallow and deep trench isolation structures in semiconductor integrated circuits James W. Adkisson, Andres Bryant, Anthony K. Stamper 2010-05-25
6121064 STI fill for SOI which makes SOI inspectable Jerome B. Lasky, Bret Philips, Anthony C. Speranza, Justin W. Wong 2000-09-19