Issued Patents All Time
Showing 25 most recent of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12082403 | One time programmable bitcell with select device in isolated well | Andrew E. Horch, Oleg Ivanov | 2024-09-03 |
| 10623192 | Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security | — | 2020-04-14 |
| 10163520 | OTP cell with improved programmability | Chun-Yun Jian | 2018-12-25 |
| 10032522 | Three-transistor OTP memory cell | Harry Luan, Tao Su, Charlie Cheng | 2018-07-24 |
| 9224714 | Semiconductor device having a through-substrate via | Arkadii V. Samoilov, Tyler Parent | 2015-12-29 |
| 9129710 | Dynamic trim method for non volatile memory products | Yi He, Sean Patrick Lynch, Che Chen, Wei Zhao, Albert Bergemont | 2015-09-08 |
| 8748232 | Semiconductor device having a through-substrate via | Arkadii V. Samoilov, Tyler Parent | 2014-06-10 |
| 8630137 | Dynamic trim method for non-volatile memory products | Yi He, Sean Patrick Lynch, Che Chen, Wei Zhao, Albert Bergemont | 2014-01-14 |
| 6962842 | Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT | Alexander Kalnitsky, Sang-Hoon Park, Viktor Zekeriya | 2005-11-08 |
| 6599810 | Shallow trench isolation formation with ion implantation | Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2003-07-29 |
| 6530997 | Use of gaseous silicon hydrides as a reducing agent to remove re-sputtered silicon oxide | Steven C. Avanzino | 2003-03-11 |
| 6383906 | Method of forming junction-leakage free metal salicide in a semiconductor wafer with ultra-low silicon consumption | Karsten Wieczorek, Nicholas J. Kepler, Paul R. Besser | 2002-05-07 |
| 6380040 | Prevention of dopant out-diffusion during silicidation and junction formation | Nick Kepler, Karsten Wieczorek, Paul R. Besser | 2002-04-30 |
| 6380047 | Shallow trench isolation formation with two source/drain masks and simplified planarization mask | Basab Bandyopadhyay, Nick Kepler, Olov Karlsson, Effiong Ibok, Christopher F. Lyons | 2002-04-30 |
| 6323516 | Flash memory device and fabrication method having a high coupling ratio | Steven K. Park | 2001-11-27 |
| 6265273 | Method of forming rectangular shaped spacers | Steven C. Avanzino, Stephen Keetai Park, Bharath Rangarajan, Jeffrey A. Shields, Guarionex Morales | 2001-07-24 |
| 6238986 | Formation of junctions by diffusion from a doped film at silicidation | Nick Kepler, Karsten Wieczorek, Paul R. Besser | 2001-05-29 |
| 6239031 | Stepper alignment mark structure for maintaining alignment integrity | Nick Kepler, Olov Karlsson, Basab Bandyopadhyah, Effiong Ibok, Christopher F. Lyons | 2001-05-29 |
| 6232635 | Method to fabricate a high coupling flash cell with less silicide seam problem | Steven C. Avanzino, Jeffrey A. Shields, Stephen Keetai Park | 2001-05-15 |
| 6171962 | Shallow trench isolation formation without planarization mask | Olov Karlsson, Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Effiong Ibok | 2001-01-09 |
| 6169005 | Formation of junctions by diffusion from a doped amorphous silicon film during silicidation | Nick Kepler, Karsten Wieczorek, Paul R. Besser | 2001-01-02 |
| 6162699 | Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery | Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-12-19 |
| 6162689 | Multi-depth junction formation tailored to silicide formation | Nick Kepler, Karsten Wieczorek, Paul R. Besser | 2000-12-19 |
| 6150243 | Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer | Karsten Wieczorek, Nick Kepler, Paul R. Besser | 2000-11-21 |
| 6143624 | Shallow trench isolation formation with spacer-assisted ion implantation | Nick Kepler, Olov Karlsson, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-11-07 |