Issued Patents All Time
Showing 25 most recent of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12433007 | Transistor gate trench engineering to decrease capacitance and resistance | Seung Hoon Sung, Willy Rachmady, Jack T. Kavalieros, Marko Radosavljevic | 2025-09-30 |
| 12432964 | Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology | Glenn A. Glass, Anand S. Murthy, Robert Ehlert, Marko Radosavljevic, Nicole K. Thomas +1 more | 2025-09-30 |
| 12424589 | Contiguous shield structures in microelectronic assemblies having hybrid bonding | Beomseok Choi, Adel A. Elsherbini, Johanna M. Swan, Shawna M. Liff | 2025-09-23 |
| 12417978 | Microelectronic assemblies having backside die-to-package interconnects | Adel A. Elsherbini, Kimin Jun, Shawna M. Liff, Johanna M. Swan | 2025-09-16 |
| 12396232 | III-N diodes with n-doped wells and capping layers | Richard Geiger, Georgios Panagopoulos, Luis-Felipe Giles, Peter Baumgartner, Harald Gossner +2 more | 2025-08-19 |
| 12381039 | High voltage metal insulator metal (MIM) capacitor | Marko Radosavljevic | 2025-08-05 |
| 12336268 | Gallium nitride (GaN) integrated circuit technology | Nicole K. Thomas, Samuel James BADER, Marko Radosavljevic, Pratik KOIRALA, Nityan NAIR | 2025-06-17 |
| 12302618 | Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology | Samuel James BADER, Pratik KOIRALA, Nicole K. Thomas, Marko Radosavljevic | 2025-05-13 |
| 12292608 | Gallium nitride (GaN) integrated circuit technology with optical communication | Marko Radosavljevic, Nicole K. Thomas, Pratik KOIRALA, Nityan NAIR, Paul B. Fischer | 2025-05-06 |
| 12199018 | Direct bonding in microelectronic assemblies | Adel A. Elsherbini, Krishna Bharath, Kimin Jun, Aleksandar Aleksov, Mohammad Enamul Kabir +3 more | 2025-01-14 |
| 12156473 | Inductor/core assemblies for integrated circuits | Kevin Lin, Nicholas James Harold McKubre | 2024-11-26 |
| 12148747 | Gallium nitride (GAN) three-dimensional integrated circuit technology | Marko Radosavljevic, Pratik KOIRALA, Nicole K. Thomas, Paul B. Fischer, Adel A. Elsherbini +5 more | 2024-11-19 |
| 12148757 | Integration of Si-based transistors with non-Si technologies by semiconductor regrowth over an insulator material | Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Rahul Ramaswamy +2 more | 2024-11-19 |
| 12148690 | Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitances | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner | 2024-11-19 |
| 12125888 | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication | Marko Radosavljevic, Sansaptak Dasgupta | 2024-10-22 |
| 12107060 | Microelectronic assemblies with inductors in direct bonding regions | Adel A. Elsherbini, Zhiguo Qian, Gerald Pasdast, Mohammad Enamul Kabir, Kimin Jun +5 more | 2024-10-01 |
| 12080763 | Silicide for group III-nitride devices and methods of fabrication | Sansaptak Dasgupta, Marko Radosavljevic, Paul B. Fischer, Walid M. Hafez | 2024-09-03 |
| 12062631 | Microelectronic assemblies with inductors in direct bonding regions | Adel A. Elsherbini, Krishna Bharath, Kevin P. O'Brien, Kimin Jun, Mohammad Enamul Kabir +5 more | 2024-08-13 |
| 12034085 | Variable capacitance device with multiple two-dimensional electron gas (2DEG) layers | Harald Gossner, Peter Baumgartner, Uwe Hodel, Domagoj Siprak, Stephan Leuschner +3 more | 2024-07-09 |
| 12027613 | III-N transistor arrangements for reducing nonlinearity of off-state capacitance | Nidhi Nidhi, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Rahul Ramaswamy +2 more | 2024-07-02 |
| 11942378 | Tunnel polarization junction III-N transistors | Marko Radosavljevic, Sansaptak Dasgupta | 2024-03-26 |
| 11894465 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2024-02-06 |
| 11881511 | Superlattice FINFET with tunable drive current capability | Nidhi Nidhi, Rahul Ramaswamy, Sansaptak Dasgupta, Marko Radosavljevic, Johann Christian Rode +2 more | 2024-01-23 |
| 11848362 | III-N transistors with contacts of modified widths | Rahul Ramaswamy, Nidhi Nidhi, Walid M. Hafez, Johann Christian Rode, Marko Radosavljevic +1 more | 2023-12-19 |
| 11799057 | Group III-nitride light emitting devices including a polarization junction | Sansaptak Dasgupta, Marko Radosavljevic | 2023-10-24 |