Issued Patents All Time
Showing 1–25 of 101 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12225833 | Oxide-based resistive memory having a plasma-exposed bottom electrode | Takashi Ando, Hiroyuki Miyazoe, Babar A. Khan, Youngseok Kim, Dexin Kong +2 more | 2025-02-11 |
| 11700778 | Method for controlling the forming voltage in resistive random access memory devices | Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando +3 more | 2023-07-11 |
| 11647680 | Oxide-based resistive memory having a plasma-exposed bottom electrode | Takashi Ando, Hiroyuki Miyazoe, Babar A. Khan, Youngseok Kim, Dexin Kong +2 more | 2023-05-09 |
| 11594596 | Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor | Paul C. Jamison, Takashi Ando, John G. Massey | 2023-02-28 |
| 11508438 | RRAM filament location based on NIR emission | Franco Stellari, Takashi Ando, Cyril Cabral, Jr., Martin M. Frank, Peilin Song +1 more | 2022-11-22 |
| 11309383 | Quad-layer high-k for metal-insulator-metal capacitors | Kisik Choi, Takashi Ando, Paul C. Jamison, John G. Massey | 2022-04-19 |
| 11258012 | Oxygen-free plasma etching for contact etching of resistive random access memory | Devi Koty, Qingyun Yang, Hiroyuki Miyazoe, Takashi Ando, Vijay Narayanan +1 more | 2022-02-22 |
| 11216595 | Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology | Richard H. Boivie, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla, Wanki Kim +10 more | 2022-01-04 |
| 11152214 | Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device | Takashi Ando, John Bruley, Martin M. Frank, Vijay Narayanan, John Rozen | 2021-10-19 |
| 11121209 | Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor | Takashi Ando, Hemanth Jagannathan, Paul C. Jamison, Vijay Narayanan | 2021-09-14 |
| 11038013 | Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor | Paul C. Jamison, Takashi Ando, John G. Massey | 2021-06-15 |
| 10997321 | Encryption engine with an undetectable/tamper proof private key in late node CMOS technology | Richard H. Boivie, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla, Wanki Kim +10 more | 2021-05-04 |
| 10991881 | Method for controlling the forming voltage in resistive random access memory devices | Steven P. Consiglio, Cory Wajda, Kandabara Tapily, Takaaki Tsunomura, Takashi Ando +3 more | 2021-04-27 |
| 10978551 | Surface area enhancement for stacked metal-insulator-metal (MIM) capacitor | Takashi Ando, Hemanth Jagannathan, Paul C. Jamison, Vijay Narayanan | 2021-04-13 |
| 10886362 | Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement | Takashi Ando, Hemanth Jagannathan, Paul C. Jamison | 2021-01-05 |
| 10833150 | Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures | Martin M. Frank, Kam-Leung Lee, Vijay Narayanan, Jean Fompeyrine, Stefan Abel +2 more | 2020-11-10 |
| 10505112 | CMOS compatible non-filamentary resistive memory stack | Takashi Ando, Adam M. Pyzyna, John Bruley | 2019-12-10 |
| 10423805 | Encryption engine with an undetectable/tamper-proof private key in late node CMOS technology | Richard H. Boivie, Daniel J. Friedman, Kohji Hosokawa, Charanjit Singh Jutla, Wanki Kim +10 more | 2019-09-24 |
| 10361093 | Multi time programmable memories using local implantation in high-K/ metal gate technologies | Takashi Ando, Chandrasekharan Kothandaraman | 2019-07-23 |
| 10361281 | Method to improve reliability of replacement gate device | Takashi Ando, Kisik Choi, Vijay Narayanan | 2019-07-23 |
| 10332957 | Stacked capacitor with symmetric leakage and break-down behaviors | Takashi Ando, Vijay Narayanan, Adam M. Pyzyna | 2019-06-25 |
| 10290700 | Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement | Takashi Ando, Hemanth Jagannathan, Paul C. Jamison | 2019-05-14 |
| 10211064 | Multi time programmable memories using local implantation in high-K/ metal gate technologies | Takashi Ando, Chandrasekharan Kothandaraman | 2019-02-19 |
| 10083967 | Non-volatile memory device employing a deep trench capacitor | Herbert L. Ho, Donghun Kang | 2018-09-25 |
| 10043584 | Three terminal fuse structure created by oxygen vacancy traps in hafnium-based oxides | Chandrasekharan Kothandaraman | 2018-08-07 |