Issued Patents All Time
Showing 26–50 of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9059292 | Source and drain doping profile control employing carbon-doped semiconductor material | Pranita Kulkarni, Donald R. Wall, Zhengmao Zhu | 2015-06-16 |
| 9041119 | Forming CMOS with close proximity stressors | Desmond J. Donegan, Jr., Abhishek Dube, Steven P. Jones, Jophy Stephen Koshy | 2015-05-26 |
| 9013008 | Semiconductor structures and methods of manufacturing the same | Xi Li | 2015-04-21 |
| 9006052 | Self aligned device with enhanced stress and methods of manufacture | Judson R. Holt, Keith H. Tabakman | 2015-04-14 |
| 8993395 | Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacers | Dureseti Chidambarrao, Ramachandran Muralidhar, Philip J. Oldiges | 2015-03-31 |
| 8940595 | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Dechao Guo, Judson R. Holt +6 more | 2015-01-27 |
| 8921939 | Stressed channel FET with source/drain buffers | Jeffrey B. Johnson, Ramachandran Muralidhar, Philip J. Oldiges, Kai Xiu | 2014-12-30 |
| 8895384 | Gate structures and methods of manufacture | Unoh Kwon, Ramachandran Muralidhar | 2014-11-25 |
| 8779525 | Method for growing strain-inducing materials in CMOS circuits in a gate first flow | Bo Bai, Linda Black, Abhishek Dube, Judson R. Holt, Kathryn T. Schonenberg +2 more | 2014-07-15 |
| 8741725 | Butted SOI junction isolation structures and devices and method of fabrication | Jeffrey B. Johnson, Shreesh Narasimha, Hasan M. Nayfeh, Robert R. Robison | 2014-06-03 |
| 8618617 | Field effect transistor device | Kevin K. Chan, Abhishek Dube, Eric C. Harley, Judson R. Holt, Kathryn T. Schonenberg +3 more | 2013-12-31 |
| 8604564 | Semiconductor structures and methods of manufacturing the same | Xi Li | 2013-12-10 |
| 8551845 | Structure and method for increasing strain in a device | Kevin K. Chan, Abhishek Dube | 2013-10-08 |
| 8546219 | Reducing performance variation of narrow channel devices | Deepal Wehella-Gamage | 2013-10-01 |
| 8541814 | Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacers | Dureseti Chidambarrao, Ramachandran Muralidhar, Philip J. Oldiges | 2013-09-24 |
| 8513122 | Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor | Christian Lavoie, Ahmet S. Ozcan | 2013-08-20 |
| 8492234 | Field effect transistor device | Kevin K. Chan, Abhishek Dube, Eric C. Harley, Judson R. Holt, Kathryn T. Schonenberg +3 more | 2013-07-23 |
| 8490029 | Method of fabricating a device using low temperature anneal processes, a device and design structure | Anthony G. Domenicucci, Terence L. Kane, Shreesh Narasimha, Karen A. Nummy, Yun-Yu Wang | 2013-07-16 |
| 8482076 | Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor | Christian Lavoie, Ahmet S. Ozcan | 2013-07-09 |
| 8426265 | Method for growing strain-inducing materials in CMOS circuits in a gate first flow | Bo Bai, Linda Black, Abhishek Dube, Judson R. Holt, Kathryn T. Schonenberg +2 more | 2013-04-23 |
| 8421191 | Monolayer dopant embedded stressor for advanced CMOS | Kevin K. Chan, Abhishek Dube, Judson R. Holt, Jinghong Li, Joseph S. Newbury +2 more | 2013-04-16 |
| 8394712 | Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions | Abhishek Dube | 2013-03-12 |
| 8378424 | Semiconductor structure having test and transistor structures | Abhishek Dube, Kathryn T. Schonenberg, Zhengmao Zhu | 2013-02-19 |
| 8361847 | Stressed channel FET with source/drain buffers | Jeffrey B. Johnson, Ramachandran Muralidhar, Philip J. Oldiges, Kai Xiu | 2013-01-29 |
| 8343825 | Reducing dislocation formation in semiconductor devices through targeted carbon implantation | Anthony G. Domenicucci, Shreesh Narasimha, Karen A. Nummy, Yun-Yu Wang | 2013-01-01 |