Issued Patents All Time
Showing 201–225 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9985109 | FinFET with reduced parasitic capacitance | Emre Alptekin, Sivananda K. Kanakasabapathy | 2018-05-29 |
| 9985032 | Selectively degrading current resistance of field effect transistor devices | Effendi Leobandung, Dieter Wendel, Tenko Yamashita | 2018-05-29 |
| 9966454 | Contact area to trench silicide resistance reduction by high-resistance interface removal | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-05-08 |
| 9960168 | Capacitor strap connection structure and fabrication method | Kangguo Cheng, Benjamin Cipriany, Ramachandra Divakaruni, Brian J. Greene, Ali Khakifirooz +2 more | 2018-05-01 |
| 9954107 | Strained FinFET source drain isolation | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-04-24 |
| 9947763 | FinFET with reduced capacitance | Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III | 2018-04-17 |
| 9947744 | Nanowire semiconductor device including lateral-etch barrier region | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-04-17 |
| 9947663 | FinFET CMOS with silicon fin N-channel FET and silicon germanium fin P-channel FET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-04-17 |
| 9947586 | Tunneling fin type field effect transistor with epitaxial source and drain regions | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-04-17 |
| 9941392 | Gate planarity for FinFET using dummy polish stop | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-04-10 |
| 9941385 | Finfet with reduced capacitance | Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III | 2018-04-10 |
| 9941378 | Air-gap top spacer and self-aligned metal gate for vertical FETs | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-04-10 |
| 9941302 | Structure and method to form defect free high-mobility semiconductor fins on insulator | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-04-10 |
| 9941205 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2018-04-10 |
| 9929163 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Kangguo Cheng, Ali Khakifirooz | 2018-03-27 |
| 9923084 | Forming a fin using double trench epitaxy | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2018-03-20 |
| 9917177 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2018-03-13 |
| 9917082 | Approach to fabrication of an on-chip resistor with a field effect transistor | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-03-13 |
| 9911849 | Transistor and method of forming same | Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-03-06 |
| 9905692 | SOI FinFET fins with recessed fins and epitaxy in source drain region | Alexander Reznicek, Shogo Mochizuki, Nicolas L. Breil, Oleg Gluschenkov | 2018-02-27 |
| 9905469 | Method and structure for forming FinFET CMOS with dual doped STI regions | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-02-27 |
| 9899525 | Increased contact area for finFETs | Chung-Hsun Lin, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-02-20 |
| 9899524 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Zuoguang Liu, Xin Miao, Tenko Yamashita | 2018-02-20 |
| 9893171 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-02-13 |
| 9881926 | Static random access memory (SRAM) density scaling by using middle of line (MOL) flow | Kangguo Cheng, Sivananda K. Kanakasabapathy, Theodorus E. Standaert, Junli Wang | 2018-01-30 |