Issued Patents All Time
Showing 176–200 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10083972 | Hybrid logic and SRAM contacts | Kangguo Cheng, Ali Khakifirooz | 2018-09-25 |
| 10084070 | Punch through stopper in bulk finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-09-25 |
| 10079232 | FinFET CMOS with silicon fin n-channel FET and silicon germanium fin p-channel FET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-09-18 |
| 10068920 | Silicon germanium fins on insulator formed by lateral recrystallization | Alexander Reznicek, Shogo Mochizuki, Nicolas L. Breil, Oleg Gluschenkov | 2018-09-04 |
| 10062785 | Fin field-effect transistor (FinFET) with reduced parasitic capacitance | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-28 |
| 10056489 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-21 |
| 10056367 | Gate stack integrated metal resistors | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-21 |
| 10056366 | Gate stack integrated metal resistors | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-21 |
| 10050141 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-14 |
| 10050121 | Replacement metal gate structures | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-08-14 |
| 10049985 | Contact line having insulating spacer therein and method of forming same | Keith H. Tabakman, Patrick Carpenter, Guillaume Bouche, Michael V. Aquilino | 2018-08-14 |
| 10037916 | Semiconductor fins for finFET devices and sidewall image transfer (SIT) processes for manufacturing the same | Kangguo Cheng, Theodorus E. Standaert | 2018-07-31 |
| 10032773 | FinFET with reduced capacitance | Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III | 2018-07-24 |
| 10032769 | Cmos compatible fuse or resistor using self-aligned contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-07-24 |
| 10032711 | Integrating metal-insulator-metal capacitors with air gap process flow | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-07-24 |
| 10032677 | Method and structure to fabricate closely packed hybrid nanowires at scaled pitch | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-07-24 |
| 10020384 | Forming a fin using double trench epitaxy | Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek | 2018-07-10 |
| 10020257 | Electrical fuse and/or resistor structures | Kangguo Cheng, Ali Khakifirooz, Juntao Li | 2018-07-10 |
| 10014221 | FinFET devices | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2018-07-03 |
| 10002945 | Composite spacer enabling uniform doping in recessed fin devices | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-06-19 |
| 10002921 | Nanowire semiconductor device including lateral-etch barrier region | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2018-06-19 |
| 9997416 | Low resistance dual liner contacts for fin field-effect transistors (FinFETs) | Praneet Adusumilli, Zuoguang Liu | 2018-06-12 |
| 9997407 | Voidless contact metal structures | Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-06-12 |
| 9991366 | Anchored stress-generating active semiconductor regions for semiconductor-on-insulator FinFET | Krishna Iyengar, Tenko Yamashita, Chun-Chen Yeh | 2018-06-05 |
| 9985114 | Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2018-05-29 |